MX877RTR IXYS, MX877RTR Datasheet - Page 106

• Manufacturer Part Number: MX877RTR
• Description: IC DVR RELAY/LOAD 8CH 60V 28-QFN
• Manufacturer: IXYS

Specifications of MX877RTR

• Input Type: Parallel/Serial
• Number Of Outputs: 8
• Current - Output / Channel: 80mA
• Voltage - Supply: 6 V ~ 60 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Current - Peak Output: -

IGBT Modules – Six-Pack configuration
84

 MWI 100-17E8T
 MWI 150-17E8T

 MWI 451-17E9
Six-Pack
IGBT Modules
Six-Pack
IGBT Modules
Type
1200 V NPT IGBT
Type
New
1700 V NPT
1700 V SPT + IGBT
600 V NPT IGBT
MWI 100-06A8
MWI 100-06A8T
MWI 150-06A8
MWI 150-06A8T
MWI 200-06A8
MWI 200-06A8T
MWI 75-12A8
MWI 75-12A8T
MWI 100-12A8
MWI 100-12A8T
1200 V NPT
MWI 75-12E8
MWI 100-12E8
1200 V Trench IGBT
MWI 75-12T8T
MWI 100-12T8T
MWI 150-12T8T
1700 V SPT+ IGBT
1200 V NPT
MWI 225-12E9
MWI 300-12E9
MWI 450-12E9
MWI 225-17E9
MWI 300-17E9
3
3
3
IGBT
IGBT
IGBT
1200
1200
1200
1200
V
600
V
CES
1200
1700
1700
V
V
CES
T
C
IGBT
= 25°C
130
130
170
170
215
215
125
125
160
160
130
165
100
140
200
145
195
I
T
C25
A
C
IGBT
= 25°C
355
530
640
335
500
580
I
C25
A
T
X113 E3-Pack
Package style
Outline drawings on
pages O-30...O-52
See data sheet for pin arrangement
X114 E9-Pack
Package style
Outline drawings on
pages O-30...O-52
See data sheet for pin arrangement
C
IGBT
= 80°C
115
115
155
155
110
110
115
100
150
100
150
I
C80
A
88
88
85
85
90
75
T
C
IGBT
= 80°C
250
375
440
235
350
475
I
C80
A
T
V
J
CE(sat) typ
IGBT
= 25°C
2.0
2.0
2.0
2.0
2.0
2.0
2.2
2.2
2.2
2.2
2.0
2.0
1.7
1.7
1.7
2.3
1.3
V
T
V
J
CE(sat) typ
IGBT
= 25°C
2.10
2.00
2.20
2.50
2.30
2.25
V
T
J
= 125°C
IGBT
10.5
10.5
14.6
14.6
10.0
12.0
17.0
24.9
37.9
E
mJ
2.9
2.9
4.6
4.6
6.3
6.3
7.5
9.5
off
T
J
= 125°C
IGBT
mJ
E
20
30
45
54
80
90
off
IGBT
R
K/W
0.30
0.30
0.24
0.24
0.18
0.18
0.25
0.25
0.19
0.19
0.25
0.19
0.35
0.26
0.18
0.25
0.17
thJC
0.090
0.060
0.057
0.085
0.057
0.057
T
IGBT
R
K/W
C
thJC
diode
= 25°C
140
140
210
210
260
260
150
150
200
200
150
200
150
200
I
tbd
tbd
tbd
F25
A
T
T
C
diode
C
= 80°C
205
300
450
200
290
450
diode
I
130
130
165
165
100
100
130
130
100
130
100
130
100
150
= 80°C
F80
A
I
tbd
F80
A
88
88
NTC
NTC
NTC
NTC
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