MX877RTR IXYS, MX877RTR Datasheet - Page 119

• Manufacturer Part Number: MX877RTR
• Description: IC DVR RELAY/LOAD 8CH 60V 28-QFN
• Manufacturer: IXYS

Specifications of MX877RTR

• Input Type: Parallel/Serial
• Number Of Outputs: 8
• Current - Output / Channel: 80mA
• Voltage - Supply: 6 V ~ 60 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Current - Peak Output: -

Power MOSFETs and MOSFET Modules
Linear Power MOSFET
IXYS Linear Power MOSFETs incor-
porate a proprietary cell design that
significantly
and power dissipation capabilities.
Optimizations were made to the fun-
damental planar cell design in order to
maximize the power dissipation capa-
bilities of this Linear Power MOSFET
family. The forward Bias Safe Opera-
ting Area (FBSOA) characteristics is
one such targeted parameter that was
optimized, which essentially allowed
for a larger operating “window” as dic-
tated by the power limitations of the
device. This extended power window
translates to improved ruggedness
and power dissipation capabilities du-
ring the high thermal stress conditions
posed by the linear operating environ-
ment.
Depletion-Mode MOSFET
Fabricated using low on-resistance
HDMOS™ process these Depletion-
Mode Power MOSFETs operate in a
‘normally-on’ mode, not requiring en-
ergy or gate voltage for turn on. Unlike
the regular enhancement type MOS-
FETs these Depletion-Mode MOS-
FETs require a negative gate bias to
turn off. Consequently they remain on
at or above zero gate bias voltage but
otherwise have similar MOSFET cha-
racteristics. The operating mode, with
internal diode and enhanced linear
operating capability make them ideal
for dynamic load applications, current
control: current sources and current
regulators, and biasing off the high
voltage DC line in power systems.
Legacy (Standard) P-Channel MOS-
FET
For applications requiring load to be
connected to ground/common, it is
very convenient to use P-Channel
MOSFETs. IXYS has a wide range of
high current, high voltage P-Channel
MOSFETs which find variety of ap-
plications in complementary output
stage of totem pole output stages,
buck converters and those configu-
rations, in which load must be con-
nected between source of a MOSFET
and ground/common terminals.
improves
ruggedness
PolarP™ P-Channel MOSFET
IXYS’ Polar technology platform em-
ployed in our PolarP™ P-Channel
MOSFETs utilizes a proprietary cell
design that improves overall device
efficiency and performance. This tech-
nology platform reduces on-state re-
sistance by as much as 30% and gate
charge by 40% compared to legacy
counterparts. With such low on-state
resistances, these devices offer low
conduction and switching losses while
maintaining a low input capacitance.
The combination of low R
gate charge allow for improved ener-
gy efficiency.
These P-Channel MOSFETs are dy-
namic dV/dt and avalanche rated
making them extremely rugged in de-
manding operating environments and
can easily be paralleled due to an on-
state resistance with a positive tem-
perature coefficient. They are ideal
for ‘high side’ switching where a sim-
ple drive circuit referenced to ground
can be used, circumventing additional
‘high side’ driver circuitry commonly
involved when using an N-Channel
MOSFET. This will help designers to
reduce component count and impro-
ve reliability. Furthermore it allows for
the design of a complementary pow-
er output stage, with a corresponding
IXYS N-Channel MOSFET, for a pow-
er half bridge stage with a simple drive
circuit.
TrenchP™ P-Channel MOSFET
This new family of P-Channel devices
benefit from technological advances
derived from IXYS’ robust Trench cell
design commonly implemented in
their wide portfolio of industry recog-
nized power devices. They feature an
ultra low R
losses, and promoting improved ope-
rating and thermal efficiencies.
DS(on)
, minimizing conduction
DS(on)
and
These TrenchP™ P-Channel MOS-
FETs are suitable for ‘high side’ swit-
ching where a simple drive circuit re-
ferenced to ground can be employed,
circumventing additional ‘high side’ dri-
ver circuitry commonly involved when
using an N-Channel MOSFET. This
enables designers to reduce compo-
nent count, there by improving drive
circuit simplicity and cost structure.
Furthermore it allows for the design of
a complementary power output stage,
with a corresponding IXYS N-Chan-
nel MOSFET, for a power half bridge
stage with a simple drive circuit.
Common applications that will great-
ly benefit from these devices include
high side switching, high current re-
gulators, DC Choppers, CMOS high
power amplifiers, push-pull amplifiers,
and power solid state relays.
CoolMOS™ * Power MOSFET
The specific resistance of a conventi-
onal designed MOSFET increases by
more than the square of its blocking
voltage. For CoolMOS™ FETs, this
relation can be reduced to a linear
function making it possible to achie-
ve extremely low on-resistances at
high breakdown voltages and small
chip sizes. IXYS offers CoolMOS™
performance in the industry stan-
dard SOT-227 package as well as the
isolated packages: ISOPLUS247
ISOPLUS220
PAC
also available in many MOSFET types
affording
safety.
Due to their internal DCB isolation,
these devices simplify assembly and
provide lower thermal resistance from
junction to heatsink compared to ex-
ternal isolation materials. Together
with the low R
perature could be significantly redu-
ced, improving efficiency and reliabili-
ty. At the same case temperature, the
die can control higher currents, saving
space and costs by utilizing a smaller
number of components. CoolMOS™
devices are avalanche rated, guaran-
teeing rugged operation.
*
CoolMOS™ is a trademark of
Infineon Technologies
™
. These isolated packages are
greater convenience and
™
DS(on)
and
, the junction tem-
ISOPLUS i4-
97
™
,