SFH610A-4 Vishay, SFH610A-4 Datasheet - Page 2

• Manufacturer Part Number: SFH610A-4
• Description: OPTOCOUPLER PHOTOTRANS 320% 4DIP
• Manufacturer: Vishay

Specifications of SFH610A-4

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 56% @ 1mA
• Current Transfer Ratio (max): 320% @ 10mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 4-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 1
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 320 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 60mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1344-5; SFH610A-4GI; SFH610A-4GI

SFH610A, SFH6106
Vishay Semiconductors
Notes
(1)
(2)
www.vishay.com
608
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Insulation thickness between
emitter and detector
Comparative tracking index per DIN
IEC112/VDE 0303 part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Thermal resistance
Collector emitter leakage current
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: [e-mail]
V
V
TEST CONDITION
CE
R
max. 10 s, dip soldering distance
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
V
I
F
Optocoupler, Phototransistor Output,
V
V
V
to seating plane ≥ 1.5 mm
CE
= 60 mA
IO
R
IO
= 10 V
= 6 V
= 500 V, T
TEST CONDITION
= 500 V, T
(1)
High Reliability, 5300 V
t
p
t ≤ 10 µs
≤ 1.0 ms
amb
amb
= 100 °C
= 25 °C
SFH6106-5T
SFH610A-1
SFH6106-1
SFH610A-2
SFH6106-2
SFH610A-3
SFH6106-3
SFH610A-4
SFH6106-4
SFH610A-5
PART
SYMBOL
SYMBOL
R
R
I
I
I
I
I
I
I
I
I
I
T
C
P
P
V
I
V
V
T
C
CEO
CEO
CEO
CEO
CEO
CEO
CEO
CEO
CEO
CEO
R
R
T
V
V
FSM
I
I
I
I
amb
thja
thja
diss
diss
ISO
R
CE
CE
EC
stg
sld
F
C
C
O
IO
IO
F
R
RMS
MIN.
- 55 to + 150
- 55 to + 100
VALUE
≥ 10
≥ 10
≥ 175
5300
≥ 0.4
100
100
150
260
2.5
≥ 7
≥ 7
60
70
50
6
7
TYP.
1.25
0.01
750
500
12
11
5.2
13
2
2
2
2
5
5
5
5
5
5
Document Number: 83666
MAX.
Rev. 2.0, 10-Dec-08
1.65
100
100
100
100
100
100
10
50
50
50
50
UNIT
V
mW
mW
mm
mm
mm
mA
mA
mA
°C
°C
°C
RMS
V
A
V
V
Ω
Ω
UNIT
K/W
K/W
µA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
pF
pF
V