SFH610A-4 Vishay, SFH610A-4 Datasheet - Page 6

• Manufacturer Part Number: SFH610A-4
• Description: OPTOCOUPLER PHOTOTRANS 320% 4DIP
• Manufacturer: Vishay

Specifications of SFH610A-4

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 56% @ 1mA
• Current Transfer Ratio (max): 320% @ 10mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 4-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 1
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 320 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 60mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1344-5; SFH610A-4GI; SFH610A-4GI

SFH610A, SFH6106
Vishay Semiconductors
www.vishay.com
612
Fig. 6 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage
Fig. 7 - Permissible Pulse Handling Capability Forward Current vs.
Fig. 5 - Diode Forward Voltage vs. Forward Current
isfh610a_05
isfh610a_06
isfh610a_07
V
I
F
F
C
10
10
10
10
mA
1.2
1.1
1.0
0.9
pF
20
15
10
V
5
5
0
4
3
2
1
5
5
10
10
10
0.05
0.1
0.2
0.5
DC
-1
-5
-2
D = 0
10
0.005
0.01
0.02
-4
5
10
Pulse Width
-1
D =
10
10
-3
0
f = 1.0 MHz
t p
T
V F = f (I F )
10
10
D = parameter
For technical questions, contact: [e-mail]
Pulse cycle
0
-2
5
t p
t p
C
CE
10
V
10
e
T
1
10
-1
1
Optocoupler, Phototransistor Output,
I
25 °C
50 °C
75 °C
t
5 mA
F
p
10
0
V
s
I
I
F
F
10
10
10
High Reliability, 5300 V
1
2
2
Fig. 8 - Permissible Power Dissipation vs. Temperature
P
isfh610a_09
isfh610a_08
Fig. 9 - Permissible Diode Forward Current vs.
tot
I
F
200
mW
150
100
120
RMS
mA
50
90
60
30
0
0
0
0
Ambient Temperature
25
25
P tot = f (T A )
Diode
Transistor
50
50
Document Number: 83666
75
75
Rev. 2.0, 10-Dec-08
T
T
A
A
°C
°C
100
100