DIODE IR EMITTING GAAS TO-46

SE5455-004

Manufacturer Part NumberSE5455-004
DescriptionDIODE IR EMITTING GAAS TO-46
ManufacturerHoneywell Sensing and Control
SE5455-004 datasheets
 

Specifications of SE5455-004

Viewing Angle20°Current - Dc Forward (if)100mA
Radiant Intensity (ie) Min @ If1.8mW/sr @ 100mAWavelength935nm
Voltage - Forward (vf) Typ1.7VOrientationTop View
Mounting TypeThrough HolePackage / CaseTO-46-2, Metal Can
Peak Wavelength935nmForward Current If(av)100mA
Rise Time700nsFall Time Tf700ns
Supply Voltage Range1.7VOperating Temperature Range-55°C To +125°C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names480-2984
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contaminants in the optical path. Potential
applications include presence and motion
sensing, position encoding, limit sensing,
movement detection, and counting.
HOA2498.
Features: Choice of phototransistor or
photodarlington output • Focused for
maximum response • Wide operating
temperature -55 °C to 100 °C [-67
°F to 212 °F] • Metal-can packaged
components
Benefits: An infrared emitter and
phototransistor or photodarlington
encased side-by-side on optical axes.
Detector responds to radiation from
infrared emitter only when a reflective
object passes within its field of view.
Potential applications include presence
sensing, motion sensing, position
encoding, limit sensing, movement
detection, and counting.
LOW LIGHT REJECTION
PHOTOTRANSISTORS
SDP8475-201.
Features: T-1 plastic package • Low light
level immunity • 20° (nominal) acceptance
angle • Mechanically and spectrally
matched to SEP8505 and SEP8705
infrared emitters
Benefits: Phototransistor with internal
base-emitter shunt resistance. Transfer
molding of this device provides enhanced
optical centerline performance. Lead
lengths are staggered to provide a
simple method of polarity identification.
Provides high contrast ratio in reflective
applications where unwanted background
reflection is a possibility. Potential
applications include those which require
ambient light rejection, or in transmissive
applications where the interrupter media is
semi-transparent to infrared energy.
SDP8476-201.
Features: Side-looking plastic package
• Low light level immunity • 50° (nominal)
acceptance angle • Mechanically and
spectrally matched to SEP8506 and
SEP8706 infrared emitters
Unless otherwise noted, potential applications include printers and copiers, motion control systems, metering systems, liquid-level
sensing, data storage systems, scanning, automated transaction, drop sensors, and other noninvasive medical equipment.
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www.honeywell.com/sensing
Benefits: Phototransistor with internal
base-emitter shunt resistance. Transfer
molding of this device provides enhanced
optical centerline performance. Lead
lengths are staggered to provide a
simple method of polarity identification.
Provides high contrast ratio in reflective
applications where unwanted background
reflection is a possibility. Potential
applications include those which require
ambient light rejection, or in transmissive
applications where the interrupter media is
semi-transparent to infrared energy.
TRANSMISSIVE SENSORS
HOA1877.
Features: Choice of phototransistor or
photodarlington output • Wide operating
temperature -55 °C to 100 °C [-67 °F to
212 °F] • 12,7 mm [0.5 in] high optical axis
position • 9,52 mm [0.375 in] slot width
• Metal can packaged components
Benefits: An infrared emitter facing
a phototransistor or photodarlington.
Detector switching takes place whenever
an opaque object passes through the slot
between emitter and detector.
HOA0825.
Features: Phototransistor output • Four
mounting configurations • 4,2 mm [0.165
in] slot • Plastic-molded components
Benefits: An infrared emitter facing a
phototransistor or photodarlington. Slot in
the housing between emitter and detector
provides the means for mechanically
interrupting the emitter beam.
Phototransistor switching takes place
when an opaque object passes through
the slot between emitter and detector.
HOA086X.
Features: Phototransistor output
• Often accurate position sensing
• Four mounting configurations • 3,18 mm
[0.125 in] slot width • Choice of opaque
or IR transmissive housings • Options
include mounting tab configurations, lead
spacing, electro-optical characteristics,
detector aperture size, and housing
materials • Plastic-molded components
Benefits: An IR transmissive polysulfone
housing features smooth optical faces
without external aperture openings
(desirable when aperture blockage from
airborne contaminants is a possibility).
HOA1879.
Features: Phototransistor output
• Often accurate position sensing
• Choice of detector aperture • 3,18 mm
[0.125 in] slot width • Dust protective
housing • Plastic-molded components
Benefits: Infrared emitter facing a
phototransistor. Switching takes place
whenever an opaque object passes
through the slot between emitter and
detector. Employs an IR transmissive
housing which features smooth optical
faces without external aperture openings
(desirable when aperture blockage from
airborne contaminants is a possibility).
Often ideal where maximum position
resolution is desired.
HOA1882.
Features: Choice of phototransistor
or photodarlington output • Compact
package size • Dust protective housing
• 5,08 mm [0.200 in] slot width • Plastic-
molded components
Benefits: An infrared emitter facing
a phototransistor or photodarlington.
Detector switching takes place when an
opaque object passes through the slot
between emitter and detector. Employs
an IR transmissive housing which
features smooth optical faces without
external aperture openings; desirable
when aperture blockage from airborne
contaminants is a possibility.
HOA088X.
Features: Phototransistor output • Four
mounting configurations • Often accurate
position sensing • 3,18 mm [0.125 in] slot
width • 24 in [610 mm] min. 26 AWG UL
1429 leads • Opaque or IR transmissive
housings • Options of mounting tab
configurations, lead spacing, electro-
optical characteristics, & detector aperture
size