SIR-56ST3FF Rohm Semiconductor, SIR-56ST3FF Datasheet

EMITTER IR 950NM 5MM

SIR-56ST3FF

Manufacturer Part Number
SIR-56ST3FF
Description
EMITTER IR 950NM 5MM
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of SIR-56ST3FF

Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
5.6mW/sr @ 50mA
Wavelength
950nm
Voltage - Forward (vf) Typ
1.3V
Viewing Angle
30°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
T 1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
511-1364
SIR-56ST3F
SIR-56ST3F
Sensors
Infrared light emitting diode, top view type
SIR-56ST3F
The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household
remote control devices.
Optical control equipment
Light source for remote control devices
1) High efficiency, high output P
2) Emission spectrum well suited to silicon detectors.
3) Good current-optical output linearity.
4) Long life, high reliability.
∗ Pulse width=0.1msec, duty ratio 1%
Features
Applications
Absolute maximum ratings (Ta = 25°C)
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Parameter
O
=8.0mW (I
F
Symbol
=50mA).
Topr
Tstg
I
V
P
FP
I
F
R
D
−25 to +85
−40 to +85
Limits
100
160
0.5
5
Dimensions (Unit : mm)
2− 0.5
2−0.6
Unit
mW
mA
°C
°C
φ5.0±0.2
V
A
1
(2.5)
2
Notes:
1.
2. Dimension in parenthesis are
1
shall be ±0.2.
show for reference.
Unspecified tolerance
Anode
SIR-56ST3F
Rev.A
2
Cathode
1/3

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SIR-56ST3FF Summary of contents

Page 1

... Infrared light emitting diode, top view type SIR-56ST3F The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household remote control devices ...

Page 2

... FORWARD VOLTAGE : V (V) F Fig.2 Forward current vs. forward voltage 200 100 − 100 AMBIENT TEMPERATURE : Ta (°C) Fig.5 Relative emitting strength vs. ambient temperature SIR-56ST3F Conditions =50mA I F =50mA I F =100mA =50mA I F =50mA I F =50mA I F =50mA I F =50mA ...

Page 3

... Sensors 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 100 10° 20° 30° 40° 50° 60° 70° 80° 90° AMGULAR DISPLACEMENT : θ (deg) RELATIVE EMITTING STRENGTH (%) Fig.6 Directional pattern 100 SIR-56ST3F Rev.A 3/3 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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