EPC9002 EPC, EPC9002 Datasheet

EPC9002

Manufacturer Part Number

EPC9002

Description

BOARD DEV FOR EPC1001 100V GAN

Manufacturer

EPC

Datasheet

1.EPC1001.pdf (4 pages)

Specifications of EPC9002

Design Resources

EPC9002 Schematic EPC9002 Bill of Materials EPC9002 Gerber Files

Main Purpose

Power Management, Half H-Bridge Driver (External FET)

Utilized Ic / Part

EPC1001

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Secondary Attributes

Embedded

Primary Attributes

Other names

917-1011

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DATASHEET

EPC1001 – Enhancement Mode Power Transistor

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-

ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-

tron mobility and low temperature coefficient allows very low R

and majority carrier diode provide exceptionally low Q

can handle tasks where very high switching frequency, and low on-time are beneficial as well as

those where on-state losses dominate.

Static Characteristics (T

Dynamic Characteristics (T

Source-Drain Characteristics (T

DSS

DS(ON)

, 25 A

STG

, 100 V

DS(ON)

GS(th)

DSS

GSS

OSS

RSS

OSS

, 7 mW

ISS

DSS

Drain-to-Source Voltage

Continuous (T

Pulsed (25˚C, Tpulse = 300 µs)

Gate-to-Source Voltage

Operating Temperature

Storage Temperature

Source-Drain Recovery Charge

Gate-Source Forward Leakage

Source-Drain Forward Voltage

PARAMETER

Gate-Source Reverse Leakage

Reverse Transfer Capacitance

Drain-Source On Resistance

Total Gate Charge (V

Drain-to-Source Voltage

Gate Threshold Voltage

Gate to Source Charge

Drain Source Leakage

Gate to Drain Charge

= 25˚C unless otherwise stated)

Output Capacitance

Input Capacitance

Output Charge

= 25˚C, θ

= 25˚C unless otherwise stated)

= 20)

Maximum Ratings

= 5 V)

and zero Q

= 0.5 A, V

DS(ON)

TEST CONDITIONS

-40 to 125

-40 to 150

, while its lateral device structure

= 0 V, I

= 80 V, V

= 50 V, V

= V

= 50 V, I

= 5 V, I

. The end result is a device that

100

-5

= -5 V

, I

= 0 V, T = 125˚C

= 5 V

= 0 V, T = 25˚C

= 300 µA

= 5 mA

= 25 A

= 0 V

˚C

MIN

100

0.7

EFFICIENT POWER CONVERSION

EPC Power Transistors are supplied only in

passivated die form with solder bumps

Applications

• High Speed DC-DC conversion

• Class D Audio

• Hard Switched and High Frequency Circuits

Benefits

• Ultra High Efficiency

• Ultra Low R

• Ultra low Q

• Ultra small footprint

10.5

1.75

100

800

450

TYP

0.2

1.4

5.6

3.3

1.8

DS(on)

MAX

250

2.5

EPC1001

| PAGE 1

UNIT

µA

Related parts for EPC9002

EPC9002 Summary of contents

Page 1

... Output Charge OSS Q Source-Drain Recovery Charge RR Source-Drain Characteristics (T = 25˚C unless otherwise stated Source-Drain Forward Voltage SD EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2010 | , while its lateral device structure DS(ON) and zero Q . The end result is a device that G RR 100 25 100 6 ...

Page 2

... 2 – Gate to Source Voltage (V) GS Figure 5: Capacitance 1.4 1.2 1 0.8 0.6 0.4 0 – Drain to Source Voltage (V) DS EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2010 | 1.2 1.4 1.6 1 4 OSS ISS RSS GD 3.5 2.5 1.5 0.5 ...

Page 3

... TAPE AND REEL CONFIGURATION 4mm pitch, 12mm wide tape on 7” reel b 7” reel c a Dimension (mm) target min c (see note) f (see note) EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2010 | Figure 8: Normalized On Resistance Vs Temperature 2.5 3 3.5 -20 Figure 10: Gate Current .025 .02 ...

Page 4

... DIE OUTLINE DIE OUTLINE Bottom View Bottom View Side View RECOMMENDED LAND PATTERN (measurements in µm) (measurements in µm) EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2010 | 1001 YYYY Part Part # Number ZZZZ Marking Line 1 EPC1001 1001 SEATING PLANE ...

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