EVAL-AD5232-10EBZ

Manufacturer Part NumberEVAL-AD5232-10EBZ
DescriptionBOARD EVALUATION FOR AD5232-10
ManufacturerAnalog Devices Inc
EVAL-AD5232-10EBZ datasheet
 

Specifications of EVAL-AD5232-10EBZ

Main PurposeDigital PotentiometerUtilized Ic / PartAD5232
Lead Free Status / RoHS StatusLead free / RoHS CompliantSecondary Attributes-
Embedded-Primary Attributes-
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AD5232
Parameter
5, 9
DYNAMIC CHARACTERISTICS
Bandwidth
Total Harmonic Distortion
V
Settling Time
W
Resistor Noise Voltage
Crosstalk (C
/C
)
W1
W2
Analog Crosstalk (C
/C
)
W1
W2
FLASH/EE MEMORY RELIABILITY
10
Endurance
11
Data Retention
1
Typical parameters represent average readings at 25°C and V
2
Resistor position nonlinearity (R-INL) error is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. I
400 μA @ V
= 5 V for the R
= 10 kΩ version, I
DD
AB
3
INL and DNL are measured at V
with the RDACx configured as a potentiometer divider similar to a voltage output digital-to-analog converter. V
W
DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions (see Figure 23).
4
The A, B, and W resistor terminals have no limitations on polarity with respect to each other. Dual supply operation enables ground-referenced bipolar signal
adjustment.
5
Guaranteed by design; not subject to production test.
6
Common-mode leakage current is a measure of the dc leakage from any A, B, or W terminal to a common-mode bias level of V
7
Transfer (XFR) mode current is not continuous. Current is consumed while the EEMEMx locations are read and transferred to the RDACx register (see Figure 13).
8
P
is calculated from (I
× V
) + (I
× V
).
DISS
DD
DD
SS
SS
9
All dynamic characteristics use V
= +2.5 V and V
DD
10
Endurance is qualified to 100,000 cycles per JEDEC Std. 22, Method A117 and measured at −40°C, +25°C, and +85°C. Typical endurance at +25°C is 700,000 cycles.
11
The retention lifetime equivalent at junction temperature (T
derates with junction temperature as shown in Figure 44 in the Flash/EEMEM Reliability section. The AD5232 contains 9,646 transistors. Die size = 69 mil × 115 mil,
7,993 sq. mil.
Symbol
Conditions
−3 dB, BW_10kΩ, R = 10 kΩ
THD
V
= 1 V rms, V
= 0 V, f = 1 kHz, R
w
A
B
V
= 1 V rms, V
= 0 V, f = 1 kHz, R
A
B
t
V
= 5 V, V
= 0 V, V
= V
, V
S
DD
SS
A
DD
V
= 0.50% error band, Code 0x00 to Code 0x80
W
for R
= 10 kΩ/50 kΩ/100 kΩ
AB
e
R
= 5 kΩ, f= 1 kHz
N_WB
WB
C
V
= V
, V
= 0 V, measure V
T
A
DD
B
adjacent VR making full-scale code change
C
V
= V
, V
= 0 V, measure V
TA
A1
DD
B1
5 V p-p @ f = 10 kHz; Code
= 0x80; Code
1
= 5 V.
DD
~ 50 μA for the R
= 50 kΩ version, and I
~ 25 μA for the R
W
AB
W
= −2.5 V, unless otherwise noted.
SS
) = 55°C, as per JEDEC Std. 22, Method A117. Retention lifetime, based on an activation energy of 0.6 eV,
J
Rev. A | Page 4 of 24
1
Min
Typ
500
= 10 kΩ
0.022
AB
= 50 kΩ, 100 kΩ
0.045
AB
= 0 V,
0.65/3/6
B
9
with
−5
W
with V
=
−70
W1
W2
= 0xFF
2
100
100
~ 50 μA @ V
W
= 100 kΩ version (see Figure 22).
AB
/2.
DD
Max
Unit
kHz
%
%
μs
mV/√Hz
nV-sec
dB
kCycles
Years
= 2.7 V and I
~
DD
W
= V
and V
= V
.
A
DD
B
SS