NCN6001DTBEVB ON Semiconductor, NCN6001DTBEVB Datasheet - Page 25

• Manufacturer Part Number: NCN6001DTBEVB
• Description: EVAL BOARD FOR NCN6001DTB
• Manufacturer: ON Semiconductor

Specifications of NCN6001DTBEVB

• Design Resources: NCN6001DTBEVB Gerber Files NCN6001 Demo Brd Schematic NCN6001DBEVB BOM
• Main Purpose: Interface, Smart Card
• Embedded: Yes, MCU, 8-Bit
• Utilized Ic / Part: NCN6001
• Primary Attributes: ISO 7816-3, EMV, GIE-CB Compatible
• Secondary Attributes: GSM Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: NCN6001DTB
• Other names: NCN6001DTBEVBOS

current as depicted Figure 22 and the magnetic core must
sustain this level of current without damage. In particular,
the ferrite material shall not be saturated to avoid
uncontrolled current spike during the charge up cycle.
interface shall limits the CRD_VCC output current to 200
mA maximum, under short circuit conditions. The
NCN6001 supports such a parameter, the limit being
depending upon the input and output voltages as depicted in
Figure 23.
During the operation, the inductor is subject to high peak
According to the ISO7816−3 and EMV specifications, the
180
160
140
120
100
80
60
40
20
0
2
Figure 23. Output Current Limits
3
V
o
= 3.0 V
I
omax
V
= F (V
4
bat
V
Test Conditions: Input VCC voltage = 5.0 V
o
bat
= 5.0 V
V
o
)
= 1.8 V
Figure 22. Typical Inductor Current
5
Current = 200 mA/div
Tamb = +20°C
http://onsemi.com
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Moreover, since the DC/DC efficiency depends upon the
losses developed into the active and passive components,
selecting a low ESR inductor is preferred to reduce these
losses to a minimum.
over current exist over the full temperature range. As a
matter of fact, the output current limit is reduced when the
temperature increases: see Figure 24.
160
150
140
130
120
100
110
On the other hand, the circuit is designed to make sure no
−25
Figure 24. Output Current Limit as a Function of
−5
15
TEMPERATURE (°C)
the Temperature
V
V
V
o
o
o
= 5.0 V
= 3.0 V
= 1.8 V
35
55
75
95
115