NCP2990FCT2GEVB ON Semiconductor, NCP2990FCT2GEVB Datasheet - Page 8

• Manufacturer Part Number: NCP2990FCT2GEVB
• Description: EVAL BOARD FOR NCP2990FCT2G
• Manufacturer: ON Semiconductor

Specifications of NCP2990FCT2GEVB

• Design Resources: NCP2990 EVB BOM NCP2990FCT2GEVB Gerber Files NCP2990 EVB Schematic
• Amplifier Type: Class AB
• Output Type: 1-Channel (Mono)
• Max Output Power X Channels @ Load: 1.35W x 1 @ 8 Ohm
• Voltage - Supply: 2.2 V ~ 5.5 V
• Operating Temperature: -10°C ~ 75°C
• Board Type: Fully Populated
• Utilized Ic / Part: NCP2990
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: NCP2990FCT2G
• Other names: NCP2990FCT2GEVBOS

0.25
0.15
0.05
700
600
500
400
300
200
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.1
0
0
0
Figure 23. Power Derating − 9−Pin Flip−Chip CSP
0
0
0
200 mm
Figure 21. Power Dissipation versus Output
P
for V
R
Figure 19. Power Dissipation versus Output
Dmax
L
= 8 W
20
p
0.2
= 5 V,
= 633 mW
2
T
50 mm
A
0.1
40
, AMBIENT TEMPERATURE (°C)
P
P
out
out
0.4
2
, OUTPUT POWER (W)
, OUTPUT POWER (W)
60
V
R
F = 1 kHz
THD + N < 0.1%
p
L
= 5 V
Power
= 8 W
V
R
F = 1 kHz
THD + N < 0.1%
Power
p
L
0.6
0.2
= 3 V
= 8 W
80
TYPICAL PERFORMANCE CHARACTERISTICS
PCB Heatsink Area
100
500 mm
0.8
120
0.3
2
1
140
http://onsemi.com
NCP2990
160
1.2
0.4
8
0.25
0.15
0.05
0.35
0.25
0.15
0.05
180
160
140
120
100
0.3
0.2
0.1
0.4
0.3
0.2
0.1
80
60
40
0
0
0
0
50
Figure 24. Maximum Die Temperature versus
Figure 22. Power Dissipation versus Output
Figure 20. Power Dissipation versus Output
V
p
= 2.6 V
0.05
V
p
0.1
100
V
= 3.3 V
p
0.1
= 4.2 V
R
PCB HEATSINK AREA (mm
P
P
V
L
PCB Heatsink Area
out
out
p
= 4 W
R
V
F = 1 kHz
THD + N < 0.1%
= 5 V
L
p
, OUTPUT POWER (W)
, OUTPUT POWER (W)
0.15
= 8 W
= 2.6 V
V
R
F = 1 kHz
THD + N < 0.1%
Maximum Die Temperature 150°C
150
0.2
p
L
Power
Power
= 3.3 V
= 8 W
0.2
R
200
0.3
0.25
L
= 8 W
2
0.3
)
250
0.4
0.35
300
0.4
0.5