BFP540ESD Infineon Technologies, BFP540ESD Datasheet

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BFP540ESD

Manufacturer Part Number
BFP540ESD
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP540ESD

Packages
SOT343
Vceo (max)
4.5 V
Ic(max)
80.0 mA
Nfmin (typ)
0.9 dB
Gmax (typ)
21.5 dB
Oip3
24.5 dBm

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Manufacturer:
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NPN Silicon RF Transistor*
• For ESD protected high gain low noise amplifier
• Excellent ESD performance
• Outstanding G
• Gold metallization for high reliability
• SIEGET
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP540ESD
Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
1
2
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
A
A
S
typical value 1000 V (HBM)
Noise Figure F = 0.9 dB
> 0°C
≤ 0°C
≤ 77°C
45 - Line
ms
= 21.5 dB
Marking
AUs
2)
1=B
1)
2=E
Pin Configuration
3=C
1
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
4=E
-
4
-65 ... 150
-65 ... 150
-
3
Value
250
150
4.5
10
10
80
4
1
8
Package
SOT343
BFP540ESD
2009-12-04
1
2
Unit
V
mA
mW
°C

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BFP540ESD Summary of contents

Page 1

... measured on the collector lead at the soldering point to the pcb 1) Pin Configuration 1=B 2=E 3=C 4=E Symbol V CEO V CES V CBO V EBO tot stg 1 BFP540ESD Package - - SOT343 Value Unit V 4 250 mW 150 °C -65 ... 150 -65 ... 150 2009-12-04 ...

Page 2

... V = 3.5 V, pulse measured For calculation of R please refer to Application Note Thermal Resistance thJA Symbol R thJS = 25°C, unless otherwise specified A Symbol V (BR)CEO I CES I CBO I EBO BFP540ESD Value Unit ≤ 290 K/W Values Unit min. typ. max. 4 µ 100 µ ...

Page 3

... Z S Sopt = Z S Sopt Sopt Sopt 21e 50 Ω 8GHz , = . Ω f 3GHz , = Ω 8GHz , = . -1dB 50 Ω 8GHz , = . BFP540ESD Values Unit min. typ. max GHz - 0. 0.9 1 24.5 - dBm - 11 - 2009-12-04 ...

Page 4

... The simulation data have been generated and verified GHz using typical devices. The BFP540ESD nonlinear SPICE-model reflects the typical DC- and RF-device performance with high accuracy. Please consult our website ...

Page 5

... Permissible Pulse Load K 125 150 Collector-base capacitance MHz 0.3 0.25 0.2 0.15 0.1 0. BFP540ESD = ƒ thJS p 0.5 0.2 0.1 0.05 0.02 0.01 0.005 ƒ [V] CB 2009-12- ...

Page 6

... Power gain parameter in GHz BFP540ESD = ƒ − 4.5V 2.00V 1.00V 0.75V 0.50V 100 I [mA ƒ 0.90GHz 1.80GHz 2.40GHz 3 ...

Page 7

... Noise figure F = ƒ ( 1.8 1.6 1.4 1 50Ω 0.6 S Sopt 0 BFP540ESD ) 6GHz f = 5GHz f = 4GHz f = 3GHz f = 1.8GHz f = 0.9GHz [mA Sopt I = 20mA 5.0mA [GHz] ...

Page 8

... Source impedance for min. noise figure vs. frequency 1.5 0.5 0.4 0.3 0.2 0.1 1.8GHz 2.4GHz 0.9GHz 0.1 0.2 0.3 0.4 0.5 1 1.5 2 3GHz 0 4GHz −0.1 5GHz −0.2 −0.3 −0.4 6GHz −0.5 −1.5 − 5.0mA c − 20mA c −5 −4 −3 −2 8 BFP540ESD 2009-12-04 ...

Page 9

... Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1 0.15 +0.1 0.6 -0.05 0 0.6 1.15 0.9 Manufacturer 2005, June Date code (YM) BGA420 Pin 1 Type code 0.2 4 2.15 1.1 9 BFP540ESD A +0.1 -0.05 2009-12-04 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. 10 BFP540ESD 2009-12-04 ...

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