cy62256vn Cypress Semiconductor Corporation., cy62256vn Datasheet

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cy62256vn

Manufacturer Part Number
cy62256vn
Description
256k 32k X 8 Static Ram
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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Cypress Semiconductor Corporation
Document #: 001-06512 Rev. *A
Features
Logic Block Diagram
• Temperature Ranges
• Speed: 70 ns
• Low voltage range: 2.7V–3.6V
• Low active power and standby power
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Available in standard Pb-free and non Pb-free 28-lead
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
— Automotive-E: –40°C to 125°C
(300-mil) narrow SOIC, 28-lead TSOP-I and 28-lead
Reverse TSOP-I packages
CE
WE
OE
A
A
A
A
A
A
A
A
A
10
9
8
7
6
5
4
3
2
198 Champion Court
INPUTBUFFER
DECODER
COLUMN
32K x 8
ARRA Y
Functional Description
The CY62256VN family is composed of two high-performance
CMOS static RAM’s organized as 32K words by 8 bits. Easy
memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and tri-state drivers.
These devices have an automatic power-down feature,
reducing the power consumption by over 99% when
deselected.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
addressed by the address present on the address pins (A
through A
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH.
POWER
DOWN
0
through I/O
256K (32K x 8) Static RAM
14
San Jose
). Reading the device is accomplished by selecting
7
) is written into the memory location
,
CA 95134-1709
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
[1]
0
1
2
3
4
5
6
7
Revised August 3, 2006
CY62256VN
408-943-2600
0
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cy62256vn Summary of contents

Page 1

... Document #: 001-06512 Rev. *A 256K (32K x 8) Static RAM Functional Description The CY62256VN family is composed of two high-performance CMOS static RAM’s organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and tri-state drivers. ...

Page 2

... Description . Address Inputs . Data lines. Used as input or output lines depending on operation 7 CY62256VN Power Dissipation (mA) Standby, I (µA) CC SB2 [2] Max. Typ. Max 0.1 130 ...

Page 3

... the “Instant-On” case temperature A Document #: 001-06512 Rev. *A Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current.................................................... > 200 mA Operating Range Device CY62256VN Commercial Industrial + 0.5V Automotive-A − 0.5V Automotive-E −40 CC Test Conditions = −1 ...

Page 4

... Operating Range) [6] Conditions V = 1.4V, Com’ > V – 0.3V, CC Ind’l/Auto-A V > V – 0. < 0.3V Auto-E IN DATA RETENTION MODE 1.8V V > 1.4V DR CY62256VN Max. Unit SOIC TSOPI RTSOPI Unit °C/W 68.45 87.62 87.62 °C/W 26.94 23.73 23.73 90% 90% 10% < Units Ohms ...

Page 5

... Document #: 001-06512 Rev. *A [7] Description [8] [8, 9] [8] [8, 9] [8, 9] [8] /2, input pulse levels less than less than t , and t HZCE LZCE HZOE LZOE and t HZWE SD CY62256VN CY62256VN-70 Min. Max. Unit ...

Page 6

... During this period, the I/Os are in output state and input signals should not be applied. Document #: 001-06512 Rev OHA DOE DATA VALID 50 PWE t SD DATA VALID IN CY62256VN DATA VALID t HZOE t HZCE HIGH IMPEDANCE t PD ICC 50% ISB Page [+] Feedback ...

Page 7

... ADDRESS CE WE DATA I/O Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS DATA I/O NOTE 17 t HZWE Document #: 001-06512 Rev SCE DATA VALID IN [11, 16 DATA VALID IN CY62256VN LZWE Page [+] Feedback ...

Page 8

... AMBIENT TEMPERATURE (°C) OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE –14 –12 –10 –8 – 25°C A –4 0 0.5 1.5 0.0 1.0 2 2.5 OUTPUT VOLTAGE (V) CY62256VN STANDBY CURRENT vs. AMBIENT TEMPERATURE 3.0 2.5 2.0 1.5 1.0 0 0.0 − 105 AMBIENT TEMPERATURE (°C) OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE ...

Page 9

... H H High-Z Ordering Information Speed (ns) Ordering Code 70 CY62256VNLL-70SNC CY62256VNLL-70SNXC CY62256VNLL-70ZC CY62256VNLL-70ZXC CY62256VNLL-70SNXI CY62256VNLL-70ZI CY62256VNLL-70ZXI CY62256VNLL-70ZRI CY62256VNLL-70ZRXI CY62256VNLL-70ZXA CY62256VNLL-70SNXE CY62256VNLL-70ZXE CY62256VNLL-70ZRXE Please contact your local Cypress sales representative for availability of other parts Document #: 001-06512 Rev. *A (continued) NORMALIZED I 1.25 1.00 0.75 0.50 1 800 1000 Mode Deselect/Power-down ...

Page 10

... Package Diagrams Document #: 001-06512 Rev. *A 28-lead (300-mil) SNC (Narrow Body) (51-85092) 28-lead TSOP 1 (8 × 13.4 mm) (51-85071) CY62256VN 51-85092-*B 51-85071-*G Page [+] Feedback ...

Page 11

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY62256VN 51-85074-*F ...

Page 12

... Document History Page Document Title: CY62256VN 256K (32K x 8) Static RAM Document Number: 001-06512 Orig. of REV. ECN NO. Issue Date Change ** 426504 See ECN *A 488954 See ECN Document #: 001-06512 Rev. *A Description of Change NXR New Data Sheet NXR Added Automotive product Updated ordering Information table ...

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