IDT70V261 Integrated Device Technology, IDT70V261 Datasheet
IDT70V261
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IDT70V261 Summary of contents
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... BUSY and INT outputs are non-tri-stated push-pull. ©2008 Integrated Device Technology, Inc. HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM IDT70V261 easily expands data bus width to 32 bits or more using the Master/Slave select when cascading more than one device for BUSY output flag on Master M ...
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... IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Description The IDT70V261 is a high-speed 16K x 16 Dual-Port Static RAM. The IDT70V261 is designed to be used as a stand-alone 256K-bit Dual-Port RAM combination MASTER/SLAVE Dual-Port RAM for 32-bit-or- more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-bit or wider memory system applications results in full- speed, error-free operation without the need for additional discrete logic ...
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... IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Truth Table I: Non-Contention Read/Write Control (1) Inputs R NOTE: ≠ — A — 13L ...
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... IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Absolute Maximum Ratings Symbol Rating (2) V Terminal Voltage TERM with Respect to GND Temperature T BIAS Under Bias Storage T STG Temperature I DC Output OUT Current NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device ...
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... IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol Parameter Dynamic Operating CC SEM = V Current (Both Ports Active MAX Standby Current SB1 R SEM = SEM (Both Ports - TTL R Level Inputs) ...
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... IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt AC Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load Timing of Power-Up Power-Down Electrical Characteristics Over the Operating Temperature and Supply Voltage Range ...
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... IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Waveform of Read Cycles ADDR CE OE UB, LB R/W DATA OUT BUSY OUT NOTES: 1. Timing depends on which signal is asserted last, OE, CE, LB, or UB. 2. Timing depends on which signal is de-asserted first CE, OE, LB, or UB. delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no 3 ...
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... IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Timing Waveform of Write Cycle No. 1, R/W Controlled Timing ADDRESS OE ( SEM ( SEM ( R/W (4) DATA OUT DATA IN Timing Waveform of Write Cycle No. 2, CE, UB, LB Controlled Timing ADDRESS ( SEM ( ( ...
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... IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Timing Waveform of Semaphore Read after Write Timing, Either Side VALID ADDRESS t AW SEM I R/W OE NOTES & for the duration of the above timing (both write and read cycle). ...
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... IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol BUSY TIMING (M BUSY Access Time from Address Match t BAA BUSY Disable Time from Address Not Match t BDA BUSY Access Time from Chip Enable Low ...
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... IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Timing Waveform of Write with R/W "A" BUSY "B" R/W "B" NOTES: must be met for both BUSY input (SLAVE) and output (MASTER BUSY is asserted on port "B" blocking R/W "B" ...
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... IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol Parameter INTERRUPT TIMING t Address Set-up Time AS t Write Recovery Time WR t Interrupt Set Time INS t Interrupt Reset Time INR NOTES: 1. 'X' in part number indicates power rating (S or L). ...
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... Right Port Writes "1" to Semaphore Left Port Writes "0" to Semaphore Left Port Writes "1" to Semaphore NOTES: 1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70V261. 2. There are eight semaphore flags written to via I SEM = V to access the semaphore ...
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... V per Truth master use the BUSY signal as a write inhibit signal. Thus on the IDT70V261 SRAM the BUSY pin is an output if the part is used as a master (M/S pin = slave (M/S pin = two or more master parts were used when expanding in width, a ...
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... The eight semaphore flags reside within the IDT70V261 in a separate memory space from the Dual-Port SRAM. This address space is accessed by placing a LOW input on the SEM pin (which acts ...
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... Using Semaphores—Some Examples Perhaps the simplest application of semaphores is their applica- tion as resource markers for the IDT70V261’s Dual-Port RAM. Say the 16K x 16 RAM was to be divided into two blocks which were to be dedicated at any one time to servicing either the left or right port. ...
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... IDT70V261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Ordering Information IDT XXXXX A A 999 Device Power Speed Type NOTES: 1. For other speeds, packages and powers contact your sales office. 2. Green parts available. For specific speeds, packages and powers contact your local sales office. ...