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Part Number:

NTE6154

Description:

Rectifier; 150 a @ 125c ifav@tcase; 150a ifrm; 2100a ifrm; sealed case

Manufacturer:

NTE Electronics, Inc.

Datasheet:

NTE6154.pdf

Part Number:

1N5399-E3/51

Description:

Rectifier; 1.5 a (max.) ifav@tcase; 50a ifrm; 1000v vrsm; 1.5a ifrm

Manufacturer:

General Semiconductor / Vishay

Datasheet:

1N5399-E351.pdf

Part Number:

NTE6158

Description:

Rectifier; 150 a @ 125c ifav@tcase; 150a ifrm; 2100a ifrm; sealed case

Manufacturer:

NTE Electronics, Inc.

Datasheet:

NTE6154.pdf

Part Number:

NTE6013

Description:

Rectifier; 12.7a ifav@tcase; 20 a (rms) ifrm; 300 a @ 60 hz ifrm; to-220 case

Manufacturer:

NTE Electronics, Inc.

Datasheet:

NTE6013.pdf

Part Number:

NTE6159

Description:

Rectifier; 150 a @ 125c ifav@tcase; 150a ifrm; 2100a ifrm; sealed case

Manufacturer:

NTE Electronics, Inc.

Datasheet:

NTE6154.pdf

Part Number:

BAS86-GS08

Description:

Schottky (diodes & rectifiers) 50 volt 200ma 500 ma ifrm

Manufacturer:

Vishay

Datasheet:

BAS86-GS08.pdf

Part Number:

1N5408-E3

Description:

Rectifier; 3 a (max.) @ 105c ifav@tcase; 50 to 1000v vrsm; 200a ifrm

Manufacturer:

Vishay / Small Signal & Opto Products (SSP)

Datasheet:

1N5408-E3.pdf

Part Number:

NTE156

Description:

Rectifier; 2a ifav@tcase; 1000v vrsm; 70a ifrm

Manufacturer:

NTE Electronics, Inc.

Datasheet:

NTE156.pdf

Part Number:

NTE576

Description:

Rectifier; 5.0a ifav@tcase; 150a ifrm

Manufacturer:

NTE Electronics, Inc.

Datasheet:

NTE576.pdf

Part Number:

1N5406-E3\54

Description:

Rectifier; 3 a (max.) @ 105c ifav@tcase; 50 to 1000v vrsm; 200a ifrm

Manufacturer:

Vishay / Small Signal & Opto Products (SSP)

Datasheet:

1N5408-E3.pdf

Part Number:

NTE6240

Description:

Rectifier; 16a ifav@tcase; 100a ifrm

Manufacturer:

NTE Electronics, Inc.

Datasheet:

NTE6240.pdf

Part Number:

1N5404-E3/54/BKN

Description:

Rectifier; 3 a (max.) @ 105c ifav@tcase; 50 to 1000v vrsm; 200a ifrm, cuttape

Manufacturer:

General Semiconductor / Vishay

Datasheet:

1N5408-E3.pdf

Part Number:

11DQ06

Description:

Diode, schottky rectifier; do-240al; 1.1a if; 0.53v; 150a ifrm; 1.0a iar; 81c/w

Manufacturer:

Vishay PCS

Datasheet:

11DQ06.pdf

Part Number:

FEP30DP-E3/45

Description:

Rectifier, ultrafast; dual, 30 a (max.) @ 100c ifav@tcase; 300a ifrm; 200v vrsm

Manufacturer:

General Semiconductor / Vishay

Datasheet:

FEP30DP-E345.pdf

Part Number:

NTE518

Description:

Rectifier, high voltage; 25 ma @ 50c ifav@tcase; 3a ifrm; 10000v vrsm

Manufacturer:

NTE Electronics, Inc.

Datasheet:

NTE518.pdf

Part Number:

NTE573

Description:

Rectifier, schottky; smb; 15a if; 0.95v; 60v; 0.250a ifrm

Manufacturer:

NTE Electronics, Inc.

Datasheet:

NTE573.pdf

Part Number:

31DQ09

Description:

Diode, schottky rectifier; 100v; 0.85v; 3.3a if; 210a ifrm; 3ma il (reverse)

Manufacturer:

Vishay PCS

Datasheet:

31DQ10.pdf

Part Number:

SS34-E3/57T

Description:

Rectifier, schottky; do-214ab; 3.0a if; 0.75v; 40v; 100a ifrm; 10000v/us; 1000pf

Manufacturer:

General Semiconductor / Vishay

Datasheet:

SS32-E357T.pdf

Part Number:

31DQ05

Description:

Diode, schottky rectifier; c-16; 3.3a if; 0.62 v @ 3 a, 25c; 50v; 340a ifrm

Manufacturer:

Vishay PCS

Datasheet:

31DQ05.pdf

Part Number:

BAV102T/R

Description:

Single general-purpose switching diodes - c_d max.: 5 pf; configuration: single ; i_f max: 250 ma; i_fsm max: 9 a; i_r max: 100@vr=150v na; ifrm: 625 ma; t

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAV170T/R

Description:

Low-leakage double diode - c_d max.: 2 pf; configuration: dual c.c. ; i_f max: 215 ma; i_fsm max: 4 a; i_r max: 5@vr=75v na; ifrm: 500 ma; t_rr

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAV199WT/R

Description:

Low-leakage double diode - c_d max.: 2 pf; configuration: dual series ; i_f max: 135 ma; i_fsm max: 4 a; i_r max: 5@vr=75v na; ifrm: 500 ma; t_rr

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAV20T/R

Description:

General purpose diodes - c_d max.: 5 pf; configuration: single ; i_f max: 250 ma; i_fsm max: 9 a; i_r max: 100@vr=150v na; ifrm: 625 ma; t_rr

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAV23ST/R

Description:

Dual high-voltage switching diodes - c_d max.: 5 pf; configuration: dual series ; i_f max: 225 ma; i_fsm max: 9 a; i_r max: 100@vr=200v na; ifrm: 625 ma; t

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAV70ST/R

Description:

High-speed switching diodes - c_d max.: 1.5 pf; configuration: quad c.c./c.c. ; i_f max: 250 ma; i_fsm max: 4 a; i_r max: 500@vr=80v na; ifrm: 450 ma; t

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAV74T/R

Description:

High-speed double diode - c_d max.: 1.5 pf; configuration: dual c.c. ; i_f max: 215 ma; i_fsm max: 4 a; i_r max: 100@vr=50v na; ifrm: 450 ma; t_rr

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAV756ST/R

Description:

High-speed switching diodes - c_d max.: 2 pf; configuration: quad c.a./c.c. ; i_f max: 250 ma; i_fsm max: 4 a; i_r max: 500@vr=80v na; ifrm: 500 ma; t_r

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAV99ST/R

Description:

High-speed switching diode array - c_d max.: 1.5 pf; configuration: quad 2x series ; i_f max: 200 ma; i_fsm max: 4.5 a; i_r max: 1000@vr=75v na; ifrm: 450 ma; t&l

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAV99T/R

Description:

High-speed double diode - c_d max.: 1.5 pf; configuration: dual series ; i_f max: 215 ma; i_fsm max: 4 a; i_r max: 1000@vr=75v na; ifrm: 450 ma; t_rr<

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAV99WT/R

Description:

High-speed double diode - c_d max.: 1.5 pf; configuration: dual series ; i_f max: 150 ma; i_fsm max: 4 a; i_r max: 1000@vr=75v na; ifrm: 500 ma; t_rr<

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAW101ST/R

Description:

High voltage double diode - c_d max.: 2 pf; configuration: dual isolated ; i_f max: 250 ma; i_fsm max: 4.5 a; i_r max: 150@vr=250v na; ifrm: 625 ma; t_r

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAW101T/R

Description:

High voltage double diode - c_d max.: 2 pf; configuration: dual isolated ; i_f max: 250 ma; i_fsm max: 4.5 a; i_r max: 150@vr=250v na; ifrm: 625 ma; t_r

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAW62T/R

Description:

High-speed diode - c_d max.: 2 pf; configuration: single ; i_f max: 250 ma; i_fsm max: 4 a; i_r max: 5000@vr=75v na; ifrm: 450 ma; t_rr max:

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS116HT/R

Description:

75 v low leakage diode in small sod123f package - c_d max.: 2 pf; configuration: single ; i_f max: 215 ma; i_fsm max: 4 a; i_r max: 5@vr=75v na; ifrm: 500 ma; t&l

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS116T/R

Description:

Low-leakage diode - c_d max.: 2 pf; configuration: single ; i_f max: 215 ma; i_fsm max: 4 a; i_r max: 5@vr=75v na; ifrm: 500 ma; t_rr max: 3

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS16HT/R

Description:

High-speed switching diode in sod123f package - c_d max.: 1.5 pf; configuration: single ; i_f max: 215 ma; i_fsm max: 4 a; i_r max: 1000@vr=75v na; ifrm: 500 ma;

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS19T/R

Description:

General purpose diodes - c_d max.: 5 pf; configuration: single ; i_f max: 200 ma; i_fsm max: 9 a; i_r max: 100@vr=100v na; ifrm: 625 ma; t_rr

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS216T/R

Description:

High-speed switching diode - c_d max.: 1.5 pf; configuration: single ; i_f max: 250 ma; i_fsm max: 4 a; i_r max: 1000@vr=75v na; ifrm: 500 ma; t_rr

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS21HT/R

Description:

Single high-voltage switching diode - c_d max.: 5 pf; configuration: single ; i_f max: 200 ma; i_fsm max: 9 a; i_r max: 100@vr=200v na; ifrm: 625 ma; t

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS21VD/T3

Description:

High-voltage switching diode array - c_d max.: 5 pf; configuration: triple isolated ; i_f max: 200 ma; i_fsm max: 16 a; i_r max: 100@vr=200v na; ifrm: 1000 ma; t&

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS28T/R

Description:

High-speed double diode - c_d max.: 1.5 pf; configuration: dual isolated ; i_f max: 215 ma; i_fsm max: 4 a; i_r max: 1000@vr=75v na; ifrm: 500 ma; t_rr&

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS29T/R

Description:

General purpose controlled avalanche (double) diodes - c_d max.: 35 pf; configuration: single ; i_f max: 250 ma; i_fsm max: 10 a; i_r max: 100@vr=90v na; ifrm: 60

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS321T/R

Description:

General purpose diode - c_d max.: 2 pf; configuration: single ; i_f max: 250 ma; i_fsm max: 9 a; i_r max: 100@vr=200v na; ifrm: 625 ma; t_rr

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS416T/R

Description:

Low-leakage diode - c_d max.: 2 pf; configuration: single ; i_f max: 200 ma; i_fsm max: 4 a; i_r max: 5@vr=75v na; ifrm: 500 ma; t_rr max: 3

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS45AT/R

Description:

Low-leakage diode - c_d max.: 4 pf; configuration: single ; i_f max: 250 ma; i_fsm max: 4 a; i_r max: 1@vr=125v na; ifrm: 625 ma; t_rr max:

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS45ALT/R

Description:

Low-leakage diode - c_d max.: 4 pf; configuration: single ; i_f max: 250 ma; i_fsm max: 4 a; i_r max: 1@vr=125v na; ifrm: 625 ma; t_rr max:

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS521T/R

Description:

High voltage switching diode - c_d max.: 5 pf; configuration: single ; i_f max: 250 ma; i_fsm max: 4.5 a; i_r max: 150@vr=250v na; ifrm: 1000 ma; t_rr&l

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS56T/R

Description:

High-speed double diode - c_d max.: 2.5 pf; configuration: dual isolated ; i_f max: 200 ma; i_fsm max: 9 a; i_r max: 100@vr=60v na; ifrm: 600 ma; t_rr&l

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

BAS716T/R

Description:

Low-leakage diode - c_d max.: 2 pf; configuration: single ; i_f max: 200 ma; i_fsm max: 4 a; i_r max: 5@vr=75v na; ifrm: 500 ma; t_rr max: 3

Manufacturer:

NXP Semiconductors / Philips Semiconductors

Part Number:

CMG05(TE12L,Q,M)

Description:

Rectifiers 400v vrrm 1.0a if 1.1v vfm 15a ifrm

Manufacturer:

Toshiba

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