IRF9Z14 Vishay, IRF9Z14 Datasheet

MOSFET P-CH 60V 6.7A TO-220AB

IRF9Z14

Manufacturer Part Number
IRF9Z14
Description
MOSFET P-CH 60V 6.7A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF9Z14

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
6.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
43W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
P Channel
Continuous Drain Current Id
-6.7A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Configuration
Single
Resistance Drain-source Rds (on)
0.5 Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.7 A
Power Dissipation
43 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRF9Z14

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Part Number
Manufacturer
Quantity
Price
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IRF9Z14
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Part Number:
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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ - 6.7 A, dI/dt ≤ 90 A/μs, V
= - 25 V, starting T
(Ω)
TO-220AB
a
D
J
= 25 °C, L = 3.6 mH, R
c
a
a
V
b
DD
GS
≤ V
= - 10 V
DS
G
, T
P-Channel MOSFET
J
Single
- 60
≤ 175 °C.
3.8
5.1
12
This datasheet is subject to change without notice.
g
C
S
D
= 25 Ω, I
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.50
GS
at - 10 V
6-32 or M3 screw
AS
T
= - 6.7 A (see fig. 12).
C
for 10 s
= 25 °C
T
T
C
C
TO-220AB
IRF9Z14PbF
SiHF9Z14-E3
IRF9Z14
SiHF9Z14
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
DM
I
AR
DS
GS
AR
D
AS
D
stg
design,
IRF9Z14, SiHF9Z14
- 55 to + 175
LIMIT
300
± 20
- 6.7
- 4.7
0.29
- 6.7
- 4.5
- 60
- 27
140
4.3
1.1
43
10
low
www.vishay.com/doc?91000
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRF9Z14 Summary of contents

Page 1

... C SYMBOL ° 100 ° °C C dV/dt T for screw = 25 Ω 6.7 A (see fig. 12 ≤ 175 °C. J This datasheet is subject to change without notice. IRF9Z14, SiHF9Z14 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance LIMIT UNIT ± 6 4 0.29 W/° ...

Page 2

... IRF9Z14, SiHF9Z14 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... C 3.0 2.5 2.0 1.5 1.0 - 4.5 V 0.5 = 175 °C 0 91088_04 = 175 ° C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF9Z14, SiHF9Z14 Vishay Siliconix 1 ° ° 175 C 20 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...

Page 4

... IRF9Z14, SiHF9Z14 Vishay Siliconix 600 MHz iss rss gd 480 oss ds gd 360 C iss C 240 oss 120 C rss Drain-to-Source Voltage ( 91088_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 6 For test circuit see figure Total Gate Charge (nC) 91088_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com ...

Page 5

... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT R Fig. 10a - Switching Time Test Circuit 150 175 Fig. 10b - Switching Time Waveforms - 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF9Z14, SiHF9Z14 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...

Page 6

... IRF9Z14, SiHF9Z14 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91088_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... Period D = Period P.W. waveform D Body diode forward current dI/dt waveform D Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive device Fig For P-Channel This datasheet is subject to change without notice. IRF9Z14, SiHF9Z14 Vishay Siliconix + + www.vishay.com www.vishay.com/doc?91000 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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