MAT02 Analog Devices, Inc., MAT02 Datasheet

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MAT02

Manufacturer Part Number
MAT02
Description
Low Noise, Matched Dual Monolithic Transistor
Manufacturer
Analog Devices, Inc.
Datasheet

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a
PRODUCT DESCRIPTION
The design of the MAT02 series of NPN dual monolithic tran-
sistors is optimized for very low noise, low drift and low r
Precision Monolithics’ exclusive Silicon Nitride “Triple-
Passivation” process stabilizes the critical device parameters
over wide ranges of temperature and elapsed time. Also, the high
current gain (h
range of collector current. Exceptional characteristics of the
MAT02 include offset voltage of 50 µV max (A/E grades) and
150 µV max F grade. Device performance is specified over the
full military temperature range as well as at 25°C.
Input protection diodes are provided across the emitter-base
junctions to prevent degradation of the device characteristics
due to reverse-biased emitter current. The substrate is clamped
to the most negative emitter by the parasitic isolation junction
created by the protection diodes. This results in complete isola-
tion between the transistors.
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
REV. E
FEATURES
Low Offset Voltage: 50 V max
Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max
High Gain (h
Excellent Log Conformance: r
Low Offset Voltage Drift: 0.1 V/ C max
Improved Direct Replacement for LM194/394
500 min at I
300 min at I
FE
FE
) of the MAT02 is maintained over a wide
C
C
):
= 1 mA
= 1 A
BE
0.3
BE
.
The MAT02 should be used in any application where low
noise is a priority. The MAT02 can be used as an input
stage to make an amplifier with noise voltage of less than
1.0 nV/√Hz at 100 Hz. Other applications, such as log/antilog
circuits, may use the excellent logging conformity of the
MAT02. Typical bulk resistance is only 0.3 Ω to 0.4 Ω. The
MAT02 electrical characteristics approach those of an ideal
transistor when operated over a collector current range of 1
µA to 10 mA. For applications requiring multiple devices
see MAT04 Quad Matched Transistor data sheet.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
Fax: 781/326-8703
NOTE
Substrate is connected to case on TO-78 package.
Substrate is normally connected to the most negative
circuit potential, but can be floated.
Dual Monolithic Transistor
PIN CONNECTION
Low Noise, Matched
(H Suffix)
TO-78
© Analog Devices, Inc., 2002
MAT02
www.analog.com

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MAT02 Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 0.3 The MAT02 should be used in any application where low noise is a priority. The MAT02 can be used as an input . BE stage to make an amplifier with noise voltage of less than 1.0 nV/√ ...

Page 2

... swept from the indicated collector currents. CB MAX 100 (∆ min –2– MAT02E MAT02F Typ Max Min Typ Max 605 400 605 590 400 590 550 300 550 485 200 485 0 ...

Page 3

... Case Temperature ≤ 40° 1.8 W Ambient Temperature ≤ 70° 500 mW Operating Temperature Range MAT02E –25°C to +85°C Model MAT02EH MAT02FH CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. ...

Page 4

... Performance Characteristics MAT02 TPC 1. Current Gain vs. Collector Current TPC 4. Base-Emitter-On Voltage vs. Collector Current TPC 7. Saturation Voltage vs. Collector Current TPC 2. Current Gain vs. Temperature TPC 5. Small Signal Input Resistance vs. Collector Current TPC 8. Noise Voltage Density vs. Frequency –4– TPC 3. Gain Bandwidth vs. Collector Current TPC 6 ...

Page 5

... Leakage vs. Temperature TPC 16. Collector-to-Collector Capacitance vs. Reverse Bias Voltage REV. E TPC 11. Total Noise vs. Collective Current TPC 14. Collector-to-Collector Capacitance vs. Collector-to Substrate Voltage TPC 17. Emitter-Base Capacitance vs. Reverse Bias Voltage –5– MAT02 TPC 12. Collector-to-Base Leakage vs. Temperature TPC 15. Collector-Base Capacitance vs. Reverse Bias Voltage ...

Page 6

... MAT02 LOG CONFORMANCE TESTING The log conformance of the MAT02 is tested using the circuit shown above. The circuit employs a dual transdiode logarithmic converter operating at a fixed ratio of collector currents that are swept over a 10:1 range. The output of each transdiode converter is the V of the transistor plus an error term which is the prod- ...

Page 7

... For the MAT02 ø, ε Ø ø and therefore (5) CB The In (I ± 0.6% from each pair when using the MAT02, and this gain error is easily trimmed out by varying R , all of CB –7– . The r I term causes departure from the desired ...

Page 8

... The error from cancelled Since the MAT02 bulk resistance is approximately 0.39 Ω 3.9 Ω and will give good error cancellation more complex circuits, such as the circuit in Figure 3, it may be inconvenient to apply a compensation voltage to each indi- vidual base. A better approach is to sum all compensation to the bases of Q1. The “ ...

Page 9

... tionship. Linearity of better than 0.1% is readily achievable with this circuit if the MAT02 pairs are carefully kept at the same temperature. REV. E Figure 6. Multifunction Converter MULTIFUNCTION CONVERTER The multifunction converter circuit provides an accurate means of squaring, square rooting, and raising ratios to arbitrary pow- and I ers ...

Page 10

... The MAT02 noise voltage is exceptionally low, only 1 nV/√ when operated over a collector current range mA. A single-ended ×1000 amplifier that takes advantage of this low MAT02 noise level is shown in Figure 8. In addition to low noise, the amplifier has very low drift and high CMRR. An and A ...

Page 11

... This can be accomplished by slightly unbalancing the collector load resistors. This adjustment will reduce the drift to less than 0.1 µV/°C. REV. E Input bias current is relatively low due to the high current gain of the MAT02. The minimum β of 400 for the MAT02F implies an input bias current of approximately 2.5 µ This circuit should be used with signals having relatively low of 3 kΩ ...

Page 12

... MAT02 0.040 (1.02) MAX Revision History Location 4/02—Data Sheet changed from REV REV. E. Changes to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1/02—Data Sheet changed from REV REV. D. Edits to FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Edits to ABSOLUTE MAXIMUM RATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Edits to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Deleted ELECTRICAL CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Deleted WAFER TEST LIMITS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Deleted TYPICAL ELECTRICAL CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Deleted DICE CHARACTERISTICS ...

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