MW6S010 Freescale Semiconductor, MW6S010 Datasheet

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MW6S010

Manufacturer Part Number
MW6S010
Description
RF Power Field Effect Transistor
Manufacturer
Freescale Semiconductor
Datasheet

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 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
• Typical Two - Tone Performance @ 960 MHz, V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for Class A or Class AB base station applications with frequencies
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
125 mA, P
Output Power
Derate above 25°C
Case Temperature 80°C, 10 W PEP
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — - 37 dBc
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
out
= 10 Watts PEP
C
= 25°C
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
DQ
=
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
BROADBAND RF POWER MOSFETs
D
J
MW6S010GMR1
MW6S010GNR1
450 - 1500 MHz, 10 W, 28 V
Document Number: MW6S010
MW6S010MR1
MW6S010NR1
LATERAL N - CHANNEL
CASE 1265A - 02, STYLE 1
MW6S010GNR1(GMR1)
CASE 1265 - 08, STYLE 1
MW6S010NR1(MR1)
TO - 270 - 2 GULL
- 65 to +175
Value
- 0.5, +68
- 0.5, +12
Value
PLASTIC
61.4
0.35
2.85
TO - 270 - 2
200
PLASTIC
(1.2)
Rev. 1, 5/2005
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
W
1

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MW6S010 Summary of contents

Page 1

... MOS devices should be observed.  Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts Operation DD MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 Document Number: MW6S010 Rev. 1, 5/2005 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 450 - 1500 MHz LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs ...

Page 2

... Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) V 420 MHz<Frequency<470 MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 2 Rating 1 = 25°C unless otherwise noted) C Symbol ...

Page 3

... Microstrip Z3 0.213″ x 0.500″ Microstrip Z4 0.313″ x 1.503″ Microstrip Figure 1. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Schematic — 900 MHz Table 6. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Designations and Values — 900 MHz Part B1 C1, C6, C11, C20 C2, C18, C19 C3, C16 ...

Page 4

... MW6S010N Figure 2. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Layout — 900 MHz MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 4 C7 C10 C11 C18 C16 C15 C19 C13 C12 C20 C17 C14 RF Device Data Freescale Semiconductor ...

Page 5

... Figure 5. Intermodulation Distortion Products 48 46 P1dB = 42.23 dBm (16. 100 19 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 −8 −10 −12 −14 −16 −18 −20 −22 −24 −26 960 970 = 28 Vdc 125 mA 3rd Order DQ 5th Order 7th Order ...

Page 6

... OUTPUT POWER (WATTS) CW out Figure 10. Power Gain versus Output Power MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 6 TYPICAL CHARACTERISTICS — 900 MHz Vdc 125 945 MHz G ps η D ACPR OUTPUT POWER (WATTS) AVG. ...

Page 7

... JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application. D MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 200 210 2 7 ...

Page 8

... MHz Z source f = 800 MHz Figure 13. Series Equivalent Source and Load Impedance — 900 MHz MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 Ω 980 MHz Z load f = 800 MHz Vdc 125 mA PEP DD DQ out source load MHz Ω Ω ...

Page 9

... Microstrip Z3 0.225″ x 0.080″ Microstrip Z4, Z7 0.440″ x 0.080″ Microstrip Figure 14. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Schematic — 450 MHz Table 7. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Designations and Values — 450 MHz Part B1 C2, C15 C3, C14 C4, C9, C10, C13 ...

Page 10

... MW6S010N 450 MHz Figure 15. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Layout — 450 MHz MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 C14 C15 C13 C12 C10 C11 RF Device Data Freescale Semiconductor ...

Page 11

... Vdc 450 MHz, N−CDMA IS−95 Pilot, −5 Sync, Paging, Traffic Codes 8 Through 13 −10 −15 −20 −25 550 600 650 0.1 Figure 19. Single - Carrier N - CDMA ACPR, ALT1 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 −40 −6 −9 −45 −50 −12 −15 −55 − ...

Page 12

... MHz Figure 20. Series Equivalent Source and Load Impedance — 450 MHz MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 Ω 500 MHz Z source f = 500 MHz Z load f = 400 MHz Vdc 150 mA PEP DD DQ out source load MHz Ω Ω ...

Page 13

... RF Device Data Freescale Semiconductor NOTES MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 13 ...

Page 14

... D2 Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç PIN 3 Ç Ç Ç Ç c1 DATUM H PLANE A1 A2 NOTE 7 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 14 PACKAGE DIMENSIONS PIN ONE EXPOSED ...

Page 15

... PLANE E5 E3 EXPOSED HEATSINK AREA PIN 1 CASE 1265A - 02 ISSUE 270- 2 GULL PLASTIC MW6S010GNR1(GMR1) MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 GAGE L1 PLANE L A1 DETAIL Y NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD ...

Page 16

... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 Document Number: MW6S010 Rev. 1, 5/2005 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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