SPD07N60S5 Infineon Technologies, SPD07N60S5 Datasheet

MOSFET N-CH 600V 7.3A DPAK

SPD07N60S5

Manufacturer Part Number
SPD07N60S5
Description
MOSFET N-CH 600V 7.3A DPAK
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPD07N60S5

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7.3A
Vgs(th) (max) @ Id
5.5V @ 350µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
970pF @ 25V
Power - Max
83W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.6 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.3 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
Other names
SP000313948
SPD07N60S5INTR

Available stocks

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Quantity
Price
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Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPU07N60S5
SPD07N60S5
Rev. 2.5
Maximum Ratings
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
D
D
C
C
= - A, V
= 7.3 A, V
= 25 °C
= 100 °C
DD
DD
= 50 V
= 50 V
T
DS(on)
C
Package
PG-TO251
PG-TO252
= 25°C
p
in TO-251 and TO-252
limited by T
AR
AR
limited by T
limited by T
jmax
Ordering Code
Q67040-S4196
Q67040-S4186
Page 1
jmax
jmax
1)
Symbol
I
I
E
E
I
V
V
P
T
D
D puls
AR
AS
AR
GS
GS
tot
j ,
T
stg
Marking
07N60S5
07N60S5
PG-TO252
2
R
-55... +150
DS(on)
V
I
DS
D
Value
14.6
±20
± 30
230
7.3
4.6
0.5
7.3
83
1
SPU07N60S5
SPD07N60S5
3
PG-TO251
2008-04-10
600
0.6
7.3
Unit
A
mJ
A
V
W
°C
1
V
A
2
3

Related parts for SPD07N60S5

SPD07N60S5 Summary of contents

Page 1

... Operating and storage temperature Rev. 2.5 Ordering Code Q67040-S4196 Q67040-S4186 Symbol puls jmax limited jmax limited jmax tot stg Page 1 SPU07N60S5 SPD07N60S5 600 0.6 DS(on) I 7.3 D PG-TO252 PG-TO251 Marking 07N60S5 07N60S5 Value 7.3 4.6 14.6 230 0.5 7.3 ±20 ± -55... +150 2008-04-10 V Ω ...

Page 2

... V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =4.6A DS(on) GS =25° =150° =1MHz, open Drain R G Page 2 SPU07N60S5 SPD07N60S5 Value Unit 20 V/ns Values Unit min. typ. max 1.5 K 260 °C Values Unit min. typ. max. 600 - - ...

Page 3

... V V d(on =12 Ω I =7.3A d(off =350V, I =7. =350V, I =7.3A 10V =350V, I =7. (plateau) DD Page 3 SPU07N60S5 SPD07N60S5 Values min. typ. max 970 - 370 - 120 =0/10V 170 - 20 - 7 while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss ...

Page 4

... /dt=100A/µ Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n Page 4 SPU07N60S5 SPD07N60S5 Values min. typ 750 = 4.9 Value typ. 0.00012 0.0004578 0.000645 0.001867 0.004795 0.045 E xternal H eatsink T case Unit max. 7.3 A 14.6 1.2 ...

Page 5

... Typ. output characteristic =25° parameter µ Rev. 2.5 2 Safe operating area parameter : 100 120 °C 160 Typ. output characteristic parameter: t 20V A 12V 10V Page 5 SPU07N60S5 SPD07N60S5 ) DS =25° 0.001 0. 0 =150° µ 20V 12V 10V 8.5V 8V 7. 2008-04-10 ...

Page 6

... Rev. 2.5 6 Drain-source on-state resistance R DS(on) parameter : I 20V 12V 10V 9V 8.5V 8V 7. Typ. gate charge V DS(on)max GS parameter Page 6 SPU07N60S5 SPD07N60S5 = 4 SPU07N60S5 3.4 Ω 2.8 2.4 2 1.6 1.2 98% 0.8 typ 0.4 0 -60 - 100 = Gate = 7.3 A pulsed D SPU07N60S5 max 0 max ...

Page 7

... Rev. 2.5 10 Avalanche SOA ≤ 150 °C par 2 Drain-source breakdown voltage V (BR)DSS 720 V 680 660 640 620 600 580 560 540 120 °C 160 - Page 7 SPU07N60S5 SPD07N60S5 ) (START) =125° (START SPU07N60S5 - 100 2008-04-10 =25°C 4 µ °C 180 T j ...

Page 8

... Typ. C stored energy oss oss DS 5.5 µJ 4.5 4 3.5 3 2.5 2 1 100 200 300 Rev. 2.5 14 Typ. capacitances parameter MHz 10 f 400 V 600 V DS Page 8 SPU07N60S5 SPD07N60S5 ) DS =0V, f=1 MHz iss oss rss 100 200 300 400 V 600 V DS 2008-04-10 ...

Page 9

... Definition of diodes switching characteristics Rev. 2.5 Page 9 SPU07N60S5 SPD07N60S5 2008-04-10 ...

Page 10

... PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) Rev. 2.5 Page 10 SPU07N60S5 SPD07N60S5 2008-04-10 ...

Page 11

... PG-TO251-3-1, PG-TO251-3-21 (I-PAK) Rev. 2.5 Page 11 SPU07N60S5 SPD07N60S5 2008-04-10 ...

Page 12

... Rev. 2.5 Page 12 SPU07N60S5 SPD07N60S5 2008-04-10 ...

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