PESD1CAN,215 NXP Semiconductors, PESD1CAN,215 Datasheet - Page 4

• Manufacturer Part Number: PESD1CAN,215
• Description: DIODE ESD PROTECTION SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD1CAN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 24V
• Voltage - Breakdown: 25.4V
• Power (watts): 200W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 40 V
• Operating Voltage: 24 V
• Breakdown Voltage: 27.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 3 A
• Peak Pulse Power Dissipation: 200 W
• Capacitance: 17 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 2.5 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4032-2; 934059097215; PESD1CAN T/R; PESD1CAN T/R

NXP Semiconductors
6. Characteristics
PESD1CAN_4
Product data sheet
Table 8.
T
[1]
[2]
[3]
Symbol
Per diode
V
I
V
C
V
r
RM
dif
amb
C
RWM
BR
CL
d
d
/C
between pin 2 and pin 3.
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 3 or 2 to 3.
= 25 C unless otherwise specified.
C
d
d
is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured
Characteristics
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
diode capacitance
matching
clamping voltage
differential resistance
Rev. 04 — 15 February 2008
Conditions
V
I
f = 1 MHz; V
f = 1 MHz; V
f = 1 MHz; V
I
I
I
R
PP
PP
R
RWM
= 5 mA
= 1 mA
= 1 A
= 3 A
= 24 V
R
R
R
= 0 V
= 0 V
= 2.5 V
CAN bus ESD protection diode
[2][3]
[1]
Min
-
-
25.4
-
-
-
-
-
-
PESD1CAN
Typ
-
< 1
27.8
11
0.1
0.1
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
24
50
30.3
17
-
-
40
70
300
Unit
V
nA
V
pF
%
%
V
V
4 of 12