PESD2CAN,215 NXP Semiconductors, PESD2CAN,215 Datasheet - Page 4

• Manufacturer Part Number: PESD2CAN,215
• Description: DIODE ESD CAN SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PESD2CAN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 24V
• Voltage - Breakdown: 26.2V
• Power (watts): 230W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 41 V
• Operating Voltage: 24 V
• Breakdown Voltage: 28 V
• Termination Style: SMD/SMT
• Peak Surge Current: 5 A
• Peak Pulse Power Dissipation: 230 W
• Capacitance: 25 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4147-2; 934060118215; PESD2CAN T/R

NXP Semiconductors
6. Characteristics
PESD2CAN_1
Product data sheet
Fig 3. Peak pulse current as a function of clamping
I
(A)
PP
8.0
6.0
4.0
2.0
0
T
voltage; typical values
25
amb
= 25 C
30
Table 8.
T
[1]
[2]
Symbol Parameter
Per diode
V
I
V
C
V
r
RM
amb
dif
RWM
BR
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 3 or 2 to 3.
35
= 25 C unless otherwise specified.
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
Characteristics
40
V
006aaa937
CL
(V)
Rev. 01 — 22 December 2006
45
Conditions
V
I
f = 1 MHz; V
I
I
I
R
PP
PP
R
RWM
Fig 4. Relative variation of peak pulse power as a
= 1 mA
= 1 mA
P
= 1 A
= 5 A
PP(25 C)
P
PP
= 24 V
1.2
0.8
0.4
0
function of junction temperature; typical values
0
R
= 0 V
50
[1][2]
[1][2]
CAN bus ESD protection diode
Min
-
-
26.2
-
-
-
-
100
PESD2CAN
Typ
-
< 1
28
25
-
-
-
150
© NXP B.V. 2006. All rights reserved.
001aaa193
T
j
Max
24
10
30.3
30
34
41
300
( C)
200
Unit
V
nA
V
pF
V
V
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