NUP1301,215 NXP Semiconductors, NUP1301,215 Datasheet - Page 2

IC DIODE ARRAY ESD SOT23-3

NUP1301,215

Manufacturer Part Number
NUP1301,215
Description
IC DIODE ARRAY ESD SOT23-3
Manufacturer
NXP Semiconductors
Datasheet

Specifications of NUP1301,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Power (watts)
220W
Polarization
2 Channel Array - Unidirectional
Voltage - Breakdown
100V
Voltage - Reverse Standoff (typ)
80V
Operating Voltage
1.25 V
Breakdown Voltage
100 V
Capacitance
0.6 pF
Termination Style
SMD/SMT
Power Dissipation Pd
250 mW
Operating Temperature Range
- 55 C to + 155 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063605215
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
NUP1301_1
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number
NUP1301
Type number
NUP1301
Symbol
Per diode
V
V
I
I
F
FRM
RRM
R
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Symbol Description
GND
V
I/O
Pinning
CC
Ordering information
Marking
Limiting values
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
Package
Name
-
ground
supply voltage
input/output
Rev. 01 — 11 May 2009
Description
plastic surface-mounted package; 3 leads
Conditions
t
p
1 ms;
Ultra low capacitance ESD protection array
Simplified outline
Marking code
LJ*
0.25
1
3
[1]
[1]
2
Min
-
-
-
-
Graphic symbol
NUP1301
© NXP B.V. 2009. All rights reserved.
Max
80
80
215
500
1
3
Version
SOT23
006aaa763
Unit
V
V
mA
mA
2
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