STM8S105K6U6 STMicroelectronics, STM8S105K6U6 Datasheet - Page 101

MCU 32KB FLASH EEPROM 32-VFQFPN

STM8S105K6U6

Manufacturer Part Number
STM8S105K6U6
Description
MCU 32KB FLASH EEPROM 32-VFQFPN
Manufacturer
STMicroelectronics
Series
STM8Sr
Datasheet

Specifications of STM8S105K6U6

Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
25
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.95 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-VFQFN, 32-VFQFPN
Processor Series
STM8S10x
Core
STM8
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
I2C, SPI, UART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
25
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWSTM8
Development Tools By Supplier
STICE-SYS001
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 7 Channel
For Use With
497-10040 - EVAL KIT STM8S DISCOVERY497-10593 - KIT STARTER FOR STM8S207/8 SER
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10123
STM8S105K6U6

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
STM8S105K6U6A
Manufacturer:
ST
Quantity:
198
Price:
STM8S105xx
10.3.12.1
10.3.12.2
Functional EMS (electromagnetic susceptibility)
While executing a simple application (toggling 2 LEDs through I/O ports), the product is
stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).
A device reset allows normal operations to be resumed. The test results are given in the table
below based on the EMS levels and classes defined in application note AN1709 (EMC design
guide for STMicrocontrollers).
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
recovered by applying a low state on the NRST pin or the oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring. See application note AN1015 (Software techniques
for improving microcontroller EMC performance).
Symbol
V
V
FESD
EFTB
FESD: Functional electrostatic discharge (positive and negative) is applied on all pins of
the device until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with
the IEC 61000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical data corruption (control registers...)
Parameter
Voltage limits to be
applied on any I/O pin to
induce a functional
disturbance
Fast transient voltage
burst limits to be applied
through 100 pF on V
DocID14771 Rev 10
DD
Table 48: EMS data
Conditions
V
conforming to IEC 1000-4-2
V
MHz,conforming to IEC 1000-4-4
DD
DD
= 5 V, T
= 5 V, T
A
A
= 25 °C ,f
= 25 °C, f
MASTER
MASTER
Electrical characteristics
= 16
= 16 MHz,
DD
Level/
class
2/B
4/A
and V
101/127
(1)
(1)
SS

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