STM8S105K6U6 STMicroelectronics, STM8S105K6U6 Datasheet - Page 80

MCU 32KB FLASH EEPROM 32-VFQFPN

STM8S105K6U6

Manufacturer Part Number
STM8S105K6U6
Description
MCU 32KB FLASH EEPROM 32-VFQFPN
Manufacturer
STMicroelectronics
Series
STM8Sr
Datasheet

Specifications of STM8S105K6U6

Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
25
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.95 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-VFQFN, 32-VFQFPN
Processor Series
STM8S10x
Core
STM8
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
I2C, SPI, UART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
25
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWSTM8
Development Tools By Supplier
STICE-SYS001
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 7 Channel
For Use With
497-10040 - EVAL KIT STM8S DISCOVERY497-10593 - KIT STARTER FOR STM8S207/8 SER
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10123
STM8S105K6U6

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
STM8S105K6U6A
Manufacturer:
ST
Quantity:
198
Price:
Electrical characteristics
10.3.6
80/127
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Symbol
Symbol
t
N
t
I
(1)
(2)
even when a write/erase operation addresses a single byte.
V
erase
RET
DD
IL
RW
Data based on characterization results, not tested in production.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
Parameter
Parameter
Fast programming time for 1 block
(128 bytes)
Erase time for 1 block (128 bytes)
Erase/write cycles
memory)
Erase/write cycles(data memory)
Data retention (program memory)
after 10k erase/write cycles at T
= +85 °C
Data retention (data memory) after
10k erase/write cycles at T
°C
Data retention (data memory) after
300 k erase/write cyclesat T
+125 °C
Supply current (Flash
programming or erasing for 1 to
128 bytes)
Input low level
voltage
Table 38: I/O static characteristics
(2)
Conditions
V
(program
DocID14771 Rev 10
DD
= 5 V
A
= +85
A
=
(2)
A
DD
Conditions
T
T
T
T
T
and T
A
A
RET
RET
RET
= +85 °C
= +125 ° C
= 55° C
= 55° C
= 85° C
A
unless otherwise specified. All unused
Min
-0.3
Min
10 k
300 k
20
20
1.0
Typ
(1)
Typ
3.0
3.0
1.0M
2.0
Max
0.3 x V
Max
3.3
3.3
STM8S105xx
DD
Unit
Unit
V
ms
ms
cycles
years
mA

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