STM32F100V8T6B STMicroelectronics, STM32F100V8T6B Datasheet - Page 67

• Manufacturer Part Number: STM32F100V8T6B
• Description: MCU 32BIT 64K FLASH 100LQFP
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32F100V8T6B

• Featured Product: STM32 Value Line
• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
• Number Of I /o: 80
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Data Converters: A/D 16x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LQFP
• Processor Series: STM32F100x
• Core: ARM Cortex M3
• Data Bus Width: 32 bit
• Data Ram Size: 8 KB
• Interface Type: I2C, SPI, USART
• Maximum Clock Frequency: 24 MHz
• Number Of Programmable I/os: 80
• Number Of Timers: 6
• Operating Supply Voltage: 2 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: STM32100B-EVAL
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 16 Channel
• On-chip Dac: 12 bit, 2 Channel
• For Use With: STM32100B-EVAL - EVAL BOARD FOR STM32F100VBT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-10658; STM32F100V8T6B

STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Figure 31. SPI timing diagram - master mode
1. Measurement points are done at CMOS levels: 0.3V
5.3.17
Note:
NSS input
CPHA= 0
CPOL=0
CPHA= 0
CPOL=1
CPHA=1
CPOL=0
CPHA=1
CPOL=1
OUTUT
INP UT
MISO
MOSI
HDMI consumer electronics control (CEC)
Refer to
input/output alternate function characteristics.
12-bit ADC characteristics
Unless otherwise specified, the parameters given in
performed under the ambient temperature, f
conditions summarized in
It is recommended to perform a calibration after each power-up.
High
t su(MI)
Section 5.3.12: I/O current injection characteristics
M SB OUT
t w(SCKH)
t w(SCKL)
MS BIN
t v(MO)
t h(MI)
t c(SCK)
Table
Doc ID 16455 Rev 6
8.
DD
and 0.7V
(1)
B I T1 OUT
BI T6 IN
DD
t h(MO)
.
PCLK2
frequency and V
Table 42
for more details on the
LSB OUT
are derived from tests
t r(SCK)
t f(SCK)
Electrical characteristics
LSB IN
DDA
supply voltage
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