MC908GR60ACFAE Freescale Semiconductor, MC908GR60ACFAE Datasheet - Page 51

• Manufacturer Part Number: MC908GR60ACFAE
• Description: IC MCU 60K FLASH 8MHZ 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908GR60ACFAE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 37
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Controller Family/series: HC08
• No. Of I/o's: 37
• Ram Memory Size: 2KB
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Embedded Interface Type: SCI, SPI
• Rohs Compliant: Yes
• Processor Series: HC08GR
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: ESCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 53
• Number Of Timers: 8
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68CBL05CE, M68EML08GPGTE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 24 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
2.7.2.2 FLASH-2 Block Protect Register
The FLASH-2 block protect register (FL2BPR) is implemented as a byte within the FLASH-1 memory;
therefore, can only be written during a FLASH-1 programming sequence. The value in this register
determines the starting location of the protected range within the FLASH-2 memory.
FL2BPR[7:0] — Block Protect Register Bits 7 to 0
Freescale Semiconductor
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
Setting this read/write bit configures the FLASH-2 array for mass or page erase operation.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be set at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
These eight bits represent bits [14:7] of a 16-bit memory address. Bit 15 is a 0 and bits [6:0] are 0s.
The resultant 16-bit address is used for specifying the start address of the FLASH-2 memory for block
protection. FLASH-2 is protected from this start address to the end of FLASH-2 memory at $7FFF.
With this mechanism, the protect start address can be $XX00 and $XX80 (128 byte page boundaries)
within the FLASH-2 array.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Page erase operation selected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
Address:
The FLASH-2 block protect register (FL2BPR) controls the block protection
for the FLASH-2 array. However, FL2BPR is implemented within the
FLASH-1 memory array and therefore, the FLASH-1 control register
(FL1CR) must be used to program/erase FL2BPR.
Reset:
Read:
Write:
MC68HC908GR60A • MC68HC908GR48A • MC68HC908GR32A Data Sheet, Rev. 5
$FF81
Figure 2-8. FLASH-2 Block Protect Register (FL2BPR)
BPR7
Bit 7
BPR6
6
BPR5
5
NOTE
Unaffected by reset
BPR4
4
BPR3
3
BPR2
2
BPR1
1
FLASH-2 Memory (FLASH-2)
BPR0
Bit 0
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