MC912DG128ACPVER Freescale Semiconductor, MC912DG128ACPVER Datasheet - Page 124
![IC MCU 16BIT 8K FLASH 112-LQFP](/photos/12/21/122171/mc912dg128acpver_sml.jpg)
MC912DG128ACPVER
Manufacturer Part Number
MC912DG128ACPVER
Description
IC MCU 16BIT 8K FLASH 112-LQFP
Manufacturer
Freescale Semiconductor
Series
HC12r
Datasheet
1.MC912DG128ACPVER.pdf
(478 pages)
Specifications of MC912DG128ACPVER
Core Processor
CPU12
Core Size
16-Bit
Speed
8MHz
Connectivity
CAN, I²C, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
69
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 16x8/10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
Processor Series
HC912D
Core
HC12
Data Bus Width
16 bit
Data Ram Size
8 KB
Interface Type
CAN, I2C, SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
69
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Minimum Operating Temperature
- 40 C
On-chip Adc
2 (10 bit, 8 Channel)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MC912DG128ACPVERTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC912DG128ACPVER
Manufacturer:
STM
Quantity:
1 244
Company:
Part Number:
MC912DG128ACPVER
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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EEPROM Memory
9.3 EEPROM Selective Write More Zeros
Technical Data
124
The EEPROM can be programmed such that one or multiple bits are
programmed (written to a logic “0”) at a time. However, the user should
never program any bit more than once before erasing the entire byte. In
other words, the user is not allowed to over write a logic “0” with another
“0’.
For some applications it may be advantageous to track more than 10k
events with a single byte of EEPROM by programming one bit at a time.
For that purpose, a special selective bit programming technique is
available. An example is shown here.
Original state of byte = binary 1111:1111 (erased)
First event is recorded by programming bit position 0
Program write = binary 1111:1110;
Second event is recorded by programming bit position 1
Program write = binary 1111:1101;
Third event is recorded by programming bit position 2
Program write = binary 1111:1011;
Fourth event is recorded by programming bit position 3
Program write = binary 1111:0111;
Events five through eight are recorded in a similar fashion.
Note that none of the bit locations are actually programmed more than
once although the byte was programmed eight times.
When this technique is utilized, a program / erase cycle is defined as
multiple writes (up to eight) to a unique location followed by a single
erase sequence.
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
EEPROM Memory
Result = binary 1111:1110
Result = binary 1111:1100
Result = binary 1111:1000
Result = binary 1111:0000
MC68HC912DT128A — Rev 4.0
MOTOROLA
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