MC9S08LC36LH Freescale Semiconductor, MC9S08LC36LH Datasheet - Page 51

• Manufacturer Part Number: MC9S08LC36LH
• Description: IC MCU 36K FLASH 2K RAM 64-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08LC36LH

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LCD, LVD, POR, PWM, WDT
• Number Of I /o: 18
• Program Memory Size: 36KB (36K x 8)
• Program Memory Type: FLASH
• Ram Size: 2.5K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 2x12b
• Oscillator Type: External
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 64-LQFP
• Processor Series: S08LC
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 2.5 KB
• Interface Type: I2C/SCI/SPI1/SPI2
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 18
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 2-ch x 12-bit
• For Use With: DEMO9S08LC60 - BOARD DEMO FOR 9S08LC60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

4.4.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. For the MC9S08LC60 Series, it is possible to burst across
FLASH array boundaries as long as the addresses are consecutive. This is possible because the high
voltage to the FLASH array does not need to be disabled between program operations. Ordinarily, when a
program or erase command is issued, an internal charge pump associated with the FLASH memory must
be enabled to supply high voltage to the array. Upon completion of the command, the charge pump is
turned off. When a burst program command is issued, the charge pump is enabled and then remains
enabled after completion of the burst program operation if these two conditions are met:
Freescale Semiconductor
•
•
The next burst program command has been queued before the current program operation has
completed.
The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
Burst Program Execution
FLASH PROGRAM AND
ERASE FLOW
MC9S08LC60 Series Data Sheet: Technical Data, Rev. 4
Figure 4-2. FLASH Program and Erase Flowchart
0
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
AND CLEAR FCBEF
TO LAUNCH COMMAND
WRITE TO FCDIV
WRITE 1 TO FCBEF
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FPVIOL OR
FACCERR ?
FCCF ?
START
DONE
1
NO
1
(Note 1)
(Note 2)
YES
0
Note 2: Wait at least four bus cycles
Note 1: Required only once after reset.
ERROR EXIT
before checking FCBEF or FCCF.
Chapter 4 Memory
51