PIC18LF2221-I/SO Microchip Technology, PIC18LF2221-I/SO Datasheet - Page 349
![IC PIC MCU FLASH 2KX16 28SOIC](/photos/6/59/65909/150-28-soic_sml.jpg)
PIC18LF2221-I/SO
Manufacturer Part Number
PIC18LF2221-I/SO
Description
IC PIC MCU FLASH 2KX16 28SOIC
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC18F2221-ISO.pdf
(402 pages)
2.PIC18F2221-ISO.pdf
(8 pages)
3.PIC18F2221-ISO.pdf
(30 pages)
4.PIC18F2221-ISO.pdf
(46 pages)
5.PIC18LF2221-IML.pdf
(394 pages)
6.PIC18F2321-IML.pdf
(396 pages)
Specifications of PIC18LF2221-I/SO
Core Size
8-Bit
Program Memory Size
4KB (2K x 16)
Core Processor
PIC
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
25
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOIC (7.5mm Width)
Controller Family/series
PIC18
No. Of I/o's
25
Eeprom Memory Size
256Byte
Ram Memory Size
512Byte
Cpu Speed
40MHz
No. Of Timers
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- PIC18F2221-ISO PDF datasheet
- PIC18F2221-ISO PDF datasheet #2
- PIC18F2221-ISO PDF datasheet #3
- PIC18F2221-ISO PDF datasheet #4
- PIC18LF2221-IML PDF datasheet #5
- PIC18F2321-IML PDF datasheet #6
- Current page: 349 of 402
- Download datasheet (7Mb)
TABLE 27-1:
© 2009 Microchip Technology Inc.
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D125
D130
D131
D132
D132B V
D133A T
D134
D135
Note 1:
Param
No.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
T
T
I
E
V
V
T
I
DDP
DDP
Sym
RETD
REF
IW
RETD
D
DRW
DEW
P
PR
IE
PEW
only and are not tested.
Refer to Section 8.7 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Supply Current during
Programming
Program Flash Memory
Cell Endurance
V
V
V
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Self-Timed Write
PIC18F2221/2321/4221/4321 FAMILY
Characteristic
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
100K
V
V
V
10K
Min
1M
3.0
40
40
—
—
—
—
MIN
MIN
MIN
100K
Typ†
10M
100
1M
10
10
—
—
—
—
—
4
2
Max
5.5
5.5
5.5
5.5
—
—
—
—
—
—
—
—
—
-40°C ≤ T
-40°C ≤ T
Units
Year Provided no other
Year Provided no other
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
mA
ms
ms
V
V
V
V
A
A
Using EECON to read/write,
V
voltage
specifications are violated
V
voltage
Using ICSP™ port, 25°C
V
voltage
specifications are violated
≤ +85°C for industrial
≤ +125°C for extended
MIN
MIN
MIN
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
DS39689F-page 349
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