DSPIC30F2020-30I/MM Microchip Technology, DSPIC30F2020-30I/MM Datasheet - Page 47

• Manufacturer Part Number: DSPIC30F2020-30I/MM
• Description: IC DSPIC MCU/DSP 12K 28QFN
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F2020-30I/MM

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 30 MIPs
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 21
• Program Memory Size: 12KB (4K x 24)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-QFN
• Core Frequency: 15MHz
• Core Supply Voltage: 3.3V
• Embedded Interface Type: I2C, SPI, UART
• No. Of I/o's: 21
• Flash Memory Size: 12KB
• Supply Voltage Range: 3V To 3.6V
• Package: 28QFN-S EP
• Device Core: dsPIC
• Family Name: dsPIC30
• Maximum Speed: 30 MHz
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 16 Bit
• Number Of Programmable I/os: 21
• Interface Type: I2C/SPI/UART
• On-chip Adc: 8-chx10-bit
• Number Of Timers: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: DM300023 - KIT DEMO DSPICDEM SMPS BUCKAC164322 - MODULE SOCKET MPLAB PM3 28/44QFNDV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

11.9
The procedure for writing data EEPROM is very similar
to the procedure for writing code memory, except that
fewer words are programmed in each operation. When
writing data EEPROM, one row of data EEPROM is
programmed at a time. Each row consists of sixteen
16-bit data words. Since fewer words are programmed
TABLE 11-9:
© 2010 Microchip Technology Inc.
Step 1: Exit the Reset vector.
0000
0000
0000
Step 2: Set the NVMCON to write 16 data words.
0000
0000
Step 3: Initialize the write pointer (W7) for TBLWT instruction.
0000
0000
0000
Step 4: Load W0:W3 with the next 4 data words to program.
0000
0000
0000
0000
Step 5: Set the read pointer (W6) and load the (next set of) write latches.
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
Step 6: Repeat steps 4-5 four times to load the write latches for 16 data words.
Command
(Binary)
Writing Data EEPROM
040100
040100
000000
24005A
883B0A
2007F0
880190
2xxxx7
2xxxx0
2xxxx1
2xxxx2
2xxxx3
EB0300
000000
BB1BB6
000000
000000
BB1BB6
000000
000000
BB1BB6
000000
000000
BB1BB6
000000
000000
(Hexadecimal)
SERIAL INSTRUCTION EXECUTION FOR WRITING DATA EEPROM
Data
GOTO 0x100
GOTO 0x100
NOP
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
CLR
NOP
TBLWTL [W6++], [W7++]
NOP
NOP
TBLWTL [W6++], [W7++]
NOP
NOP
TBLWTL [W6++], [W7++]
NOP
NOP
TBLWTL [W6++], [W7++]
NOP
NOP
#0x4005, W10
W10, NVMCON
#0x7F, W0
W0, TBLPAG
#<DestinationAddress15:0>, W7
#<WORD0>, W0
#<WORD1>, W1
#<WORD2>, W2
#<WORD3>, W3
W6
during each operation, only working registers W0:W3
are used as temporary holding registers for the data to
be programmed.
Table 11-9
writing data EEPROM. Note that a different NVMCON
value is required to write to data EEPROM, and that the
TBLPAG register is hard-coded to 0x7F (the upper byte
address of all locations of data EEPROM).
Description
shows the ICSP programming details for
DS70102K-page 47