AT91SAM9XE256-CU Atmel, AT91SAM9XE256-CU Datasheet - Page 90

• Manufacturer Part Number: AT91SAM9XE256-CU
• Description: MCU ARM9 256K FLASH 217-BGA
• Manufacturer: Atmel
• Series: AT91SAMr

Specifications of AT91SAM9XE256-CU

• Core Processor: ARM9
• Core Size: 16/32-Bit
• Speed: 180MHz
• Connectivity: EBI/EMI, Ethernet, I²C, MMC, SPI, SSC, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 56K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 1.95 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 217-LFBGA
• Processor Series: AT91SAMx
• Core: ARM926EJ-S
• Data Bus Width: 32 bit
• Data Ram Size: 32 KB
• Interface Type: 2-Wire, EBI, I2S, SPI, USART
• Maximum Clock Frequency: 180 MHz
• Number Of Programmable I/os: 96
• Number Of Timers: 6
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JTRACE-ARM-2M, KSK-AT91SAM9XE-PL, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: AT91SAM-ICE, AT91-ISP, AT91SAM9XE-EK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 4 Channel
• Package: 217LFBGA
• Device Core: ARM926EJ-S
• Family Name: 91S
• Maximum Speed: 180 MHz
• Operating Supply Voltage: 1.8|2.5|3.3 V
• For Use With: AT91SAM9XE-EK - KIT EVAL FOR AT91SAM9XEAT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

14.2.5.2
14.2.5.3
90
AT91SAM9XE128/256/512 Preliminary
Flash Write Command
Flash Full Erase Command
Table 14-6.
This command is used to write the Flash contents.
The Flash memory plane is organized into several pages. Data to be written are stored in a load
buffer that corresponds to a Flash memory page. The load buffer is automatically flushed to the
Flash:
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be
chained; an internal address buffer is automatically increased.
Table 14-8.
The Flash command Write Page and Lock (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock region
is composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
Step
n+2
n+3
...
Step
1
2
3
4
5
...
n
n+1
n+2
n+3
...
• before access to any page other than the current one
• when a new command is validated (MODE = CMDE)
Handshake Sequence
Read handshaking
Read handshaking
...
Handshake Sequence
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Read Command
Write Command
MODE[3:0]
CMDE
ADDR0
ADDR1
DATA
DATA
...
ADDR0
ADDR1
DATA
DATA
...
MODE[3:0]
DATA
DATA
...
DATA[15:0]
WP or WPL or EWP or EWPL
Memory Address LSB
Memory Address
*Memory Address++
*Memory Address++
...
Memory Address LSB
Memory Address
*Memory Address++
*Memory Address++
...
DATA[15:0]
*Memory Address++
*Memory Address++
...
6254C–ATARM–22-Jan-10