STM8S105K4T6CTR STMicroelectronics, STM8S105K4T6CTR Datasheet - Page 76

• Manufacturer Part Number: STM8S105K4T6CTR
• Description: MCU 8BIT 16K FLASH 32-LQFP
• Manufacturer: STMicroelectronics
• Series: STM8Sr

Specifications of STM8S105K4T6CTR

• Core Processor: STM8
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 25
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.95 V ~ 5.5 V
• Data Converters: A/D 7x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-LQFP
• Processor Series: STM8S10x
• Core: STM8
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: I2C, UART, IrDA, LIN, SPI
• Number Of Programmable I/os: 25
• Number Of Timers: 7
• Operating Supply Voltage: 2.95 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWSTM8
• Development Tools By Supplier: STICE-SYS001
• Minimum Operating Temperature: - 40 C
• For Use With: 497-10040 - EVAL KIT STM8S DISCOVERY497-10593 - KIT STARTER FOR STM8S207/8 SER
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
10.3.4
76/127
(2)
small R
(3)
(4)
MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer.
The oscillator selection can be optimized in terms of supply current using a high quality resonator with
Data based on characterization results, not tested in production.
t
SU(HSE)
m
value. Refer to crystal manufacturer for more details
is the start-up time measured from the moment it is enabled (by software) to a stabilized 16
HSE oscillator critical g
g
R
L
C
Co: Shunt capacitance (see crystal specification)
C
g
Internal clock sources and timing characteristics
Subject to general operating conditions for V
High speed internal RC oscillator (HSI)
Symbol
f
mcrit
m
m
HSI
m
m
L1
: Notional inductance (see crystal specification)
: Notional resistance (see crystal specification)
: Notional capacitance (see crystal specification)
>> g
= C
= (2 × Π × f
L2
mcrit
Parameter
= C: Grounded external capacitance
Frequency
R m
C m
L m
Resonator
HSE
C O
)
2
× R
Figure 20: HSE oscillator circuit diagram
Table 34: HSI oscillator characteristics
m
m
(2Co + C)
equation
C L1
C L2
DocID14771 Rev 10
Conditions
2
Resonator
OSCOUT
DD
OSCIN
and T
A
.
Min
R F
g m
Consumption
control
f HSE to core
Typ
16
STM8
Max
STM8S105xx
Unit
MHz