STM32F101RBT6TR STMicroelectronics, STM32F101RBT6TR Datasheet - Page 35
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STM32F101RBT6TR
Manufacturer Part Number
STM32F101RBT6TR
Description
MCU ARM 128KB FLASH MEM 64-LQFP
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32F101T8U6.pdf
(87 pages)
Specifications of STM32F101RBT6TR
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
36MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
51
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Processor Series
STM32F101x
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
16 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
36 MHz
Number Of Programmable I/os
51
Number Of Timers
3
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 16 Channel
For Use With
497-10030 - STARTER KIT FOR STM32497-6438 - BOARD EVALUTION FOR STM32 512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32F101RBT6TR
Manufacturer:
ST
Quantity:
2 755
Company:
Part Number:
STM32F101RBT6TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
STM32F101x8, STM32F101xB
5.3.4
5.3.5
Embedded reference voltage
The parameters given in
temperature and V
Table 11.
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design, not tested in production.
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in
measurement
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to Dhrystone 2.1 code.
Maximum current consumption
The MCU is placed under the following conditions:
●
●
●
●
●
The parameters given in
temperature and V
T
V
Symbol
V
S_vrefint
T
RERINT
REFINT
Coeff
All I/O pins are in input mode with a static value at V
All peripherals are disabled except if it is explicitly mentioned
The Flash access time is adjusted to f
wait state from 24 to 36 MHz)
Prefetch in on (reminder: this bit must be set before clock setting and bus prescaling)
When the peripherals are enabled f
(2)
(2)
(1)
Internal reference voltage
ADC sampling time when reading
the internal reference voltage
Internal reference voltage spread
over the temperature range
Temperature coefficient
Embedded internal reference voltage
scheme.
DD
DD
supply voltage conditions summarized in
Parameter
supply voltage conditions summarized in
Table 11
Table 12
Doc ID 13586 Rev 14
are derived from tests performed under the ambient
are derived from tests performed under the ambient
PCLK1
HCLK
–40 °C < T
V
DD
= f
Conditions
frequency (0 wait state from 0 to 24 MHz, 1
= 3 V ±10 mV
HCLK/2
A
Figure 12: Current consumption
< +85 °C 1.16
, f
DD
PCLK2
or V
Table
Table
= f
SS
Electrical characteristics
Min
HCLK
(no load)
8.
8.
1.20
Typ
5.1
17.1
Max
1.24
100
10
(2)
ppm/
Unit
35/87
mV
µs
°C
V