STR736FV1T6 STMicroelectronics, STR736FV1T6 Datasheet - Page 34

• Manufacturer Part Number: STR736FV1T6
• Description: MCU 32BIT 128K FLASH 100-TQFP
• Manufacturer: STMicroelectronics
• Series: STR7r

Specifications of STR736FV1T6

• Core Processor: ARM7
• Core Size: 32-Bit
• Speed: 36MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Processor Series: STR736x
• Core: ARM7TDMI
• Data Bus Width: 32 bit
• Data Ram Size: 16 KB
• Interface Type: I2C, SPI, UART
• Maximum Clock Frequency: 36 MHz
• Number Of Programmable I/os: 72
• Number Of Timers: 9
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWARM, EWARM-BL, MCBSTR730, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: STR730-SK/HIT, STR730-SK/IAR, STR730-SK/RAIS, STR731-SK/IAR, STR730-EVAL, STX-PRO/RAIS, STX-RLINK, STR79-RVDK/CPP, STR79-RVDK, STR79-RVDK/UPG
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Electrical parameters
4.3.3
34/52
Memory characteristics
Flash memory
Table 18.
1. T
2. All bits programmed to 0.
3. Guaranteed by design, not tested in production.
Symbol
t
t
t
t
t
t
t
N
t
t
t
FPW
t
BP128
BP256
RPD
ESR
t
PSL
ESL
t
t
BP64
SE32
SE64
t
DWP
SP
RET
SE8
WP
END
A
3)
= -45° C after 0 cycles, Guaranteed by characterization, not tested in production.
3)
3)
3)
3)
3)
Word program (32-bit)
Double word program(64-bit)
Bank program (64 K)
Bank program (128 K)
Bank program (256 K)
Sector erase (8 K)
Sector erase (32 K)
Sector erase (64 K)
Recovery from power-down
Program suspend latency
Erase suspend latency
Erase suspend rate
Set protection
First word program
Endurance
Data retention
Flash memory characteristics
Parameter
Double word program
Double word program
Double word program
Not preprogrammed
Preprogrammed
Not preprogrammed
Preprogrammed
Not preprogrammed
preprogrammed
Min. time from erase
resume to next erase
suspend
T
A
= 85° C
Test Conditions
2)
2)
2)
Min
10
20
Value
Typ Max
0.5
0.6
0.5
1.1
0.8
1.7
1.3
35
64
20
40
1
2
1
1.25
150
170
2.5
4.9
0.9
0.8
1.8
3.7
3.3
80
20
10
30
20
2
STR73xFxx
1)
kcycles
Years
Unit
ms
ms
μs
μs
μs
μs
μs
µs
s
s
s
s
s
s