STR736FV1T6 STMicroelectronics, STR736FV1T6 Datasheet - Page 44

• Manufacturer Part Number: STR736FV1T6
• Description: MCU 32BIT 128K FLASH 100-TQFP
• Manufacturer: STMicroelectronics
• Series: STR7r

Specifications of STR736FV1T6

• Core Processor: ARM7
• Core Size: 32-Bit
• Speed: 36MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Processor Series: STR736x
• Core: ARM7TDMI
• Data Bus Width: 32 bit
• Data Ram Size: 16 KB
• Interface Type: I2C, SPI, UART
• Maximum Clock Frequency: 36 MHz
• Number Of Programmable I/os: 72
• Number Of Timers: 9
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWARM, EWARM-BL, MCBSTR730, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: STR730-SK/HIT, STR730-SK/IAR, STR730-SK/RAIS, STR731-SK/IAR, STR730-EVAL, STX-PRO/RAIS, STX-RLINK, STR79-RVDK/CPP, STR79-RVDK, STR79-RVDK/UPG
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Electrical parameters
44/52
Table 27.
1. ADC accuracy vs. negative injection current: Injecting negative current on any of the standard (non-robust)
2. Calibration is needed once after each power-up.
Figure 21. ADC accuracy characteristics
Figure 22. Typical application with ADC
Symbol
|E
|E
|E
|E
|E
analog input pins should be avoided as this significantly reduces the accuracy of the conversion being
performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to standard
analog pins which may potentially inject negative current. The effect of negative injection current on robust
pins is specified in
Any positive injection current within the limits specified for I
affect the ADC accuracy.
O
G
T
D
L
V
|
|
|
|
|
AIN
1023
1022
1021
Total unadjusted error
Offset error
Gain error
Differential linearity error
Integral linearity error
7
6
5
4
3
2
1
0
V
ADC accuracy with f
V
R
SSA
AIN
DDA
1LSB
1
E
=5 V. This assumes that the ADC is calibrated
O
Section
IDEAL
C
Parameter
1)
2
AIN
1)
3
AINx
=
4.3.5.
V
---------------------------------------- -
DDA
4
1024
–
1)
5
1)
1 LSB
V
SSA
1)
E
6
T
IDEAL
MCLK
E
7
L
(2)
V
DD
= 20 MHz, f
V
0.6V
V
0.6V
E
T
T
D
1021 1022 1023 1024
(3)
Conditions
2.3kΩ(max)
(1)
INJ(PIN)
I
±1μA
L
ADC
E
G
V
DDA
=10 MHz, R
and
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
E
between the actual and the ideal transfer curves.
E
transition and the first ideal one.
E
transition and the last actual one.
E
between actual steps and the ideal one.
E
between any actual transition and the end point
correlation line.
10-Bit A/D
conversion
T
O
G
D
L
Σ
=Total Unadjusted Error: maximum deviation
=Integral Linearity Error: maximum deviation
=Offset Error: deviation between the first actual
=Gain Error: deviation between the last ideal
=Differential Linearity Error: maximum deviation
I
INJ(PIN)
0.15
0.97
0.76
Typ
2)
1.0
0.7
in
AIN
Section 4.3.5
STR73X
V
< 10 kΩ RAIN,
C
3.5pF
ADC
Max
2.0
1.0
1.1
1.0
1.5
STR73xFxx
does not
Unit
LSB