MC9S08MP16VLF Freescale Semiconductor, MC9S08MP16VLF Datasheet - Page 11

• Manufacturer Part Number: MC9S08MP16VLF
• Description: MCU 8BIT .25U SGF FLASH 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08MP16VLF

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 51.34MHz
• Connectivity: I²C, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 40
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 13x12b, D/A 3x5b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 48-LQFP
• Processor Series: S08MP
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: SCI
• Maximum Clock Frequency: 51.34 MHz
• Number Of Programmable I/os: 40
• Number Of Timers: 2
• Operating Supply Voltage: - 0.3 V to + 5.8 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08MP16
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 13 Channel
• On-chip Dac: 3 DAC, 5 bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Num C
1
2
3
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring P
for a known T
for any value of T
2.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,
normal handling precautions should be taken to avoid exposure to static discharge. Qualification tests are performed to ensure
that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. During
the device qualification, ESD stresses were performed for the human body model (HBM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless instructed otherwise in the device specification.
2.6
This section includes information about power supply requirements and I/O pin characteristics.
Freescale Semiconductor
— Operating Voltage
— Analog Supply voltage delta to V
— Analog Ground voltage delta to V
ESD Protection and Latch-Up Immunity
DC Characteristics
1
A
. Using this value of K, the values of P
Latch-up
Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Human
Model
Body
A
No.
.
1
2
3
Characteristic
Series resistance
Storage capacitance
Number of pulses per pin
Minimum input voltage limit
Maximum input voltage limit
Human body model (HBM)
Charge device model (CDM)
Latch-up current at T
Table 6. ESD and Latch-Up Protection Characteristics
Table 5. ESD and Latch-up Test Conditions
DD
Description
SS
Rating
(V
MC9S08MP16 Series Data Sheet, Rev. 1
(V
DD
SS
Table 7. DC Characteristics
– V
– V
1
A
= 105°C
DDA
SSA
D
)
)
and T
(2)
(2)
J
Symbol
ΔV
ΔV
can be obtained by solving
V
DD
DDA
SSA
Symbol
Symbol
V
V
I
R1
HBM
CDM
LAT
—
C
Condition
± 2000
± 500
± 100
Min
Value
1500
– 2.5
100
7.5
Equation 1
3
Min
2.7
Max
—
—
—
—
—
Electrical Characteristics
and
Equation 2
Typ
—
Unit
Unit
0
0
mA
pF
Ω
V
V
V
V
D
1
(at equilibrium)
±100
±100
iteratively
Max
5.5
11
Unit
mV
mV
V