MC9S08GT16ACFBE Freescale Semiconductor, MC9S08GT16ACFBE Datasheet - Page 49

IC MCU 16K FLASH 2K RAM 44-QFP

MC9S08GT16ACFBE

Manufacturer Part Number
MC9S08GT16ACFBE
Description
IC MCU 16K FLASH 2K RAM 44-QFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet

Specifications of MC9S08GT16ACFBE

Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
36
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-QFP
Cpu Family
HCS08
Device Core Size
8b
Frequency (max)
40MHz
Interface Type
I2C/SCI/SPI
Total Internal Ram Size
2KB
# I/os (max)
36
Operating Supply Voltage (typ)
2.5/3.3V
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
1.8V
On-chip Adc
8-chx10-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Package Type
PQFP
Processor Series
S08GT
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
2 KB
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
36
Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
M68EVB908GB60E, M68DEMO908GB60E
Minimum Operating Temperature
- 40 C
For Use With
M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Compliant

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4.4.2
Before any program or erase command can be accepted, the FLASH clock divider register (FCDIV) must
be written to set the internal clock for the FLASH module to a frequency (f
200 kHz (see
reset initialization. FCDIV cannot be written if the access error flag, FACCERR in FSTAT, is set. The user
must ensure that FACCERR is not set before writing to the FCDIV register. One period of the resulting
clock (1/f
of these timing pulses is used by the command processor to complete a program or erase command.
Table 4-5
of FCLK (f
of cycles of FCLK and as an absolute time for the case where t
shown include overhead for the command state machine and enabling and disabling of program and erase
voltages.
4.4.3
The steps for executing any of the commands are listed below. The FCDIV register must be initialized and
any error flags cleared before beginning command execution. The command execution steps are:
Freescale Semiconductor
1. Write a data value to an address in the FLASH array. The address and data information from this
Flexible block protection
Security feature for FLASH and RAM
Auto power-down for low-frequency read accesses
write is latched into the FLASH interface. This write is a required first step in any command
sequence. For erase and blank check commands, the value of the data is not important. For page
erase commands, the address may be any address in the 512-byte page of FLASH to be erased. For
mass erase and blank check commands, the address can be any address in the FLASH memory.
Whole pages of 512 bytes are the smallest blocks of FLASH that may be erased.
FCLK
shows program and erase times. The bus clock frequency and FCDIV determine the frequency
Program and Erase Times
FCLK
Program and Erase Command Execution
1
Table
Byte program
Byte program (burst)
Page erase
Mass erase
) is used by the command processor to time program and erase pulses. An integer number
Excluding start/end overhead
). The time for one cycle of FCLK is t
4.6.1). This register can be written only once, so normally this write is done during
Parameter
Table 4-5. Program and Erase Times
MC9S08GT16A/GT8A Data Sheet, Rev. 1
Cycles of FCLK
20,000
4000
9
4
FCLK
= 1/f
FCLK
FCLK
Time if FCLK = 200 kHz
= 5 µs. Program and erase times
. The times are shown as a number
FCLK
100 ms
20 µs
20 ms
45 µs
) between 150 kHz and
1
Memory
49

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