MC908GZ16MFAE Freescale Semiconductor, MC908GZ16MFAE Datasheet - Page 40
![IC MCU 16K FLASH 8MHZ 48-LQFP](/photos/12/38/123827/mc908gz16mfae_sml.jpg)
MC908GZ16MFAE
Manufacturer Part Number
MC908GZ16MFAE
Description
IC MCU 16K FLASH 8MHZ 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC68908GZ8CFJER.pdf
(314 pages)
Specifications of MC908GZ16MFAE
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
CAN, LIN, SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
37
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
48-LQFP
Controller Family/series
HC08
No. Of I/o's
37
Ram Memory Size
1KB
Cpu Speed
8MHz
No. Of Timers
2
Embedded Interface Type
CAN, SCI, SPI
Rohs Compliant
Yes
Processor Series
HC08GZ
Core
HC08
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
ESCI, SPI, UART
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
37
Number Of Timers
4
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, DEMO908GZ60E, M68EML08GZE
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
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Memory
2.6.3 FLASH Page Erase Operation
Use this step-by-step procedure to erase a page (64 bytes) of FLASH memory to read as logic 1. A page
consists of 64 consecutive bytes starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 44-byte
user interrupt vectors area also forms a page. Any FLASH memory page can be erased alone.
In applications that need more than 1000 program/erase cycles, use the 4-ms page erase specification
to get improved long-term reliability. Any application can use this 4-ms page erase specification.
However, in applications where a FLASH location will be erased and reprogrammed less than 1000 times,
and speed is important, use the 1-ms page erase specification to get a shorter cycle time.
40
10. After a time, t
1. Set the ERASE bit, and clear the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the page address range of the block to be desired.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
Programming and erasing of FLASH locations cannot be performed by
code being executed from FLASH memory. While these operations must be
performed in the order shown, other unrelated operations may occur
between the steps.
RCV
NVS
Erase
NVH
(typical 1 μs), the memory can be accessed in read mode again.
(minimum 10 μs)
(minimum 5 μs)
MC68HC908GZ16 • MC68HC908GZ8 Data Sheet, Rev. 4
(minimum 1 ms or 4 ms)
NOTE
Freescale Semiconductor
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