DSPIC30F6014A-20I/PT Microchip Technology, DSPIC30F6014A-20I/PT Datasheet - Page 188
DSPIC30F6014A-20I/PT
Manufacturer Part Number
DSPIC30F6014A-20I/PT
Description
IC DSPIC MCU/DSP 144K 80TQFP
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F2011-20ISO.pdf
(66 pages)
2.DSPIC30F6011A-30IPT.pdf
(8 pages)
3.DSPIC30F6011A-20IPT.pdf
(238 pages)
Specifications of DSPIC30F6014A-20I/PT
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
AC'97, Brown-out Detect/Reset, I²S, LVD, POR, PWM, WDT
Number Of I /o
68
Program Memory Size
144KB (48K x 24)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-TFQFP
For Use With
DM300024 - KIT DEMO DSPICDEM 1.1XLT80PT3 - SOCKET TRAN ICE 80MQFP/TQFPAC164320 - MODULE SKT MPLAB PM3 80TQFPDM300004-2 - BOARD DEMO DSPICDEM.NET 2DM300004-1 - BOARD DEMO DSPICDEM.NET 1AC30F007 - MODULE SKT FOR DSPIC30F 80TQFP
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Other names
DSPIC30F6014A20IP
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSPIC30F6014A-20I/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
- DSPIC30F2011-20ISO PDF datasheet
- DSPIC30F6011A-30IPT PDF datasheet #2
- DSPIC30F6011A-20IPT PDF datasheet #3
- Current page: 188 of 238
- Download datasheet (4Mb)
dsPIC30F6011A/6012A/6013A/6014A
TABLE 23-11: ELECTRICAL CHARACTERISTICS: BOR
TABLE 23-12: DC CHARACTERISTICS: PROGRAM AND EEPROM
DS70143B-page 186
DC CHARACTERISTICS
BO10
BO15
Note 1:
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
D135
D136
D137
D138
Note 1:
Param
Param
No.
No.
2:
3:
2:
E
V
T
T
I
E
V
V
V
T
T
T
I
I
Symbol
DEW
PEW
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
These parameters are characterized but not tested in manufacturing.
11 values not in usable operating range.
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
These parameters are characterized but not tested in manufacturing.
RETD
RETD
DEW
EB
PEW
D
DRW
P
PR
PEW
V
V
Symbol
BOR
BHYS
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
I
Program FLASH Memory
Cell Endurance
V
V
V
Erase/Write Cycle Time
Characteristic Retention
ICSP Block Erase Time
I
I
DD
DD
DD
DD
DD
DD
DD
BOR Voltage
V
low
During Programming
During Programming
During Programming
DD
for Read/Write
for Read
for Bulk Erase
for Erase/Write
Characteristic
transition high to
Characteristic
(2)
on
(2)
(2)
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
BORV = 11
BORV = 10
BORV = 01
BORV = 00
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
Preliminary
100K
V
V
Min
10K
4.5
3.0
—
40
—
—
40
—
—
—
MIN
MIN
Typ
(3)
100K
100
100
1M
10
10
10
—
—
—
—
2
2
4
(1)
4.38
Min
2.6
4.1
—
—
Max
5.5
5.5
5.5
5.5
30
30
30
—
—
—
—
—
—
—
Typ
-40°C
-40°C T
—
—
—
—
5
-40°C
-40°C T
(1)
Units
E/W
Year
E/W
Year
mA
mA
mA
ms
ms
ms
V
V
V
V
T
Max
2.71
4.53
A
A
4.4
—
—
-40 C
Using EECON to read/write
V
voltage
Provided no other specifications
are violated
Row Erase
-40 C
V
voltage
Provided no other specifications
are violated
Row Erase
Bulk Erase
T
A
A
+85°C for Industrial
+125°C for Extended
MIN
MIN
© 2005 Microchip Technology Inc.
+85°C for Industrial
+125°C for Extended
Units
= Minimum operating
= Minimum operating
mV
V
V
V
V
T
T
A
A
Conditions
Not in operating
range
+85°C
+85°C
Conditions
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