ATMEGA88-20MU Atmel, ATMEGA88-20MU Datasheet - Page 291

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ATMEGA88-20MU

Manufacturer Part Number
ATMEGA88-20MU
Description
IC AVR MCU 8K 20MHZ 5V 32-QFN
Manufacturer
Atmel
Series
AVR® ATmegar
Datasheets

Specifications of ATMEGA88-20MU

Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
23
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-VQFN Exposed Pad, 32-HVQFN, 32-SQFN, 32-DHVQFN
Package
32MLF EP
Device Core
AVR
Family Name
ATmega
Maximum Speed
20 MHz
Operating Supply Voltage
3.3|5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
23
Interface Type
SPI/TWI/USART
On-chip Adc
8-chx10-bit
Number Of Timers
3
Processor Series
ATMEGA8x
Core
AVR8
Data Ram Size
1 KB
Maximum Clock Frequency
20 MHz
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAVRTS2080A, ATASTK512-EK1-IND
Minimum Operating Temperature
- 40 C
A/d Inputs
8-Channel, 10-Bit
Cpu Speed
20 MIPS
Eeprom Memory
512 Bytes
Input Output
23
Interface
SPI/TWI/USART
Memory Type
Flash
Number Of Bits
8
Package Type
32-pin MLF
Programmable Memory
8K Bytes
Timers
2-8-bit, 1-16-bit
Voltage, Range
4.5-5.5 V
Controller Family/series
AVR MEGA
No. Of I/o's
23
Eeprom Memory Size
512Byte
Ram Memory Size
1KB
No. Of Timers
3
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
27.7.2
27.7.3
27.7.4
2545S–AVR–07/10
Considerations for Efficient Programming
Chip Erase
Programming the Flash
4. Keep the Prog_enable pins unchanged for at least 10 µs after the High-voltage has been
5. Wait until V
6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory locations.
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give XTAL1 a positive pulse. This loads the command.
B. Load Address Low byte
1. Set XA1, XA0 to “00”. This enables address loading.
2. Set BS1 to “0”. This selects low address.
3. Set DATA = Address low byte (0x00 - 0xFF).
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
applied to ensure the Prog_enable Signature has been latched.
commands.
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
CC
actually reaches 4.5V - 5.5V before giving any parallel programming
Table 27-9 on page
(1)
memories plus Lock bits. The Lock bits are
288. When programming the Flash,
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