MC912DT128ACPV Freescale Semiconductor, MC912DT128ACPV Datasheet - Page 133
MC912DT128ACPV
Manufacturer Part Number
MC912DT128ACPV
Description
IC 8MHZ 16 BIT MICROCONTROLLER
Manufacturer
Freescale Semiconductor
Series
HC12r
Datasheet
1.MC912DG128ACPVER.pdf
(478 pages)
Specifications of MC912DT128ACPV
Core Processor
CPU12
Core Size
16-Bit
Speed
8MHz
Connectivity
CAN, I²C, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
67
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 16x8/10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
KMC912DT128ACPV
Q1195202
Q1195202
Available stocks
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Manufacturer
Quantity
Price
Company:
Part Number:
MC912DT128ACPVE
Manufacturer:
MEANWELL
Quantity:
1 000
Company:
Part Number:
MC912DT128ACPVE
Manufacturer:
Freescale Semiconductor
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9.6 Program/Erase Operation
MC68HC912DT128A — Rev 4.0
MOTOROLA
CAUTION:
A program or erase operation should follow the sequence below if AUTO
bit is clear:
If the AUTO bit is set, steps 4 and 5 can be replaced by a step to poll the
EEPGM bit until it is cleared.
The state machine will not start if an attempt is made to program or erase
a protected location and therefore the EEPGM bit will never clear on that
EEPROM operation. Check for protected status or use a software
timeout to avoid a continuous loop whilst polling the EEPGM bit. If using
a timeout, ensure steps 5 and 6 are still executed.
It is possible to program/erase more bytes or words without intermediate
EEPROM reads, by jumping from step 5 to step 2.
1. Write BYTE, ROW and ERASE to desired value, write EELAT = 1
2. Write a byte or an aligned word to an EEPROM address
3. Write EEPGM = 1
4. Wait for programming,
5. Write EEPGM = 0
6. Write EELAT = 0
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
EEPROM Memory
t
PROG
or erase,
t
ERASE
delay time
Program/Erase Operation
EEPROM Memory
Technical Data
133
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