MC68HC711E9VFN2 Freescale Semiconductor, MC68HC711E9VFN2 Datasheet - Page 102

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MC68HC711E9VFN2

Manufacturer Part Number
MC68HC711E9VFN2
Description
IC MCU 12K OTP 2MHZ 52-PLCC
Manufacturer
Freescale Semiconductor
Series
HC11r
Datasheets

Specifications of MC68HC711E9VFN2

Core Processor
HC11
Core Size
8-Bit
Speed
2MHz
Connectivity
SCI, SPI
Peripherals
POR, WDT
Number Of I /o
38
Program Memory Size
12KB (12K x 8)
Program Memory Type
OTP
Eeprom Size
512 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
52-PLCC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Operating Modes and On-Chip Memory
Technical Data
102
ERASE — Erase Mode Select Bit
EELAT — EEPROM Latch Control Bit
EPGM — EPROM/OTPROM/EEPROM Programming Voltage
During EEPROM programming, the ROW and BYTE bits of PPROG are
not used. If the frequency of the E clock is 1 MHz or less, set the CSEL
bit in the OPTION register. Recall that 0s must be erased by a separate
erase operation before programming. The following examples of how to
program an EEPROM byte assume that the appropriate bits in BPROT
are cleared.
PROG
0 = Normal read or program mode
1 = Erase mode
0 = EEPROM address and data bus configured for normal reads
1 = EEPROM address and data bus configured for programming or
0 = Programming voltage to EEPROM array switched off
1 = Programming voltage to EEPROM array switched on
Operating Modes and On-Chip Memory
and cannot be programmed
erasing and cannot be read
Enable Bit
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
BYTE
0
0
1
1
#$02
$103B
$XXXX
#$03
$103B
DLY10
$103B
Table 4-8. EEPROM Erase
ROW
0
1
0
1
EELAT = 1
Set EELAT bit
Store data to EEPROM address
(for valid EEPROM address see memory
map for each device)
EELAT = 1, EPGM = 1
Turn on programming voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
Bulk erase (entire array)
Row erase (16 bytes)
Byte erase
Byte erase
Action
M68HC11E Family — Rev. 3.2
MOTOROLA

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