MC68HC711E9VFN2 Freescale Semiconductor, MC68HC711E9VFN2 Datasheet - Page 103

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MC68HC711E9VFN2

Manufacturer Part Number
MC68HC711E9VFN2
Description
IC MCU 12K OTP 2MHZ 52-PLCC
Manufacturer
Freescale Semiconductor
Series
HC11r
Datasheets

Specifications of MC68HC711E9VFN2

Core Processor
HC11
Core Size
8-Bit
Speed
2MHz
Connectivity
SCI, SPI
Peripherals
POR, WDT
Number Of I /o
38
Program Memory Size
12KB (12K x 8)
Program Memory Type
OTP
Eeprom Size
512 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
52-PLCC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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4.6.1.3 EEPROM Bulk Erase
4.6.1.4 EEPROM Row Erase
M68HC11E Family — Rev. 3.2
MOTOROLA
This is an example of how to bulk erase the entire EEPROM. The
CONFIG register is not affected in this example.
This example shows how to perform a fast erase of large sections of
EEPROM.
BULKE
ROWE
Operating Modes and On-Chip Memory
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAB
LDAB
STAB
JSR
CLR
#$06
$103B
$XXXX
#$07
$103B
DLY10
$103B
#$0E
$103B
0,X
#$0F
$103B
DLY10
$103B
EELAT = 1, ERASE = 1
Set to BULK erase mode
Store data to any EEPROM address (for
valid EEPROM address see memory map
for each device)
EELAT = 1, EPGM = 1, ERASE = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
ROW = 1, ERASE = 1, EELAT = 1
Set to ROW erase mode
Write any data to any address in ROW
ROW = 1, ERASE = 1, EELAT = 1, EPGM = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
Operating Modes and On-Chip Memory
Technical Data
EEPROM
103

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