M30262F8GP#U5 Renesas Electronics America, M30262F8GP#U5 Datasheet - Page 192
![IC M16C/TINY MCU FLASH 48LQFP](/photos/28/61/286102/48-lqfp__plqp0048kb-a_sml.jpg)
M30262F8GP#U5
Manufacturer Part Number
M30262F8GP#U5
Description
IC M16C/TINY MCU FLASH 48LQFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/Tiny/26r
Datasheets
1.M30622SAFPU5.pdf
(308 pages)
2.M30262F4GPU3.pdf
(41 pages)
3.M30262F4GPU3.pdf
(241 pages)
Specifications of M30262F8GP#U5
Core Processor
M16C/60
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, IEBus, SIO, UART/USART
Peripherals
DMA, WDT
Number Of I /o
38
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
48-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Quantity
Price
Part Number:
M30262F8GP#U5M30262F8GP#D3
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
M30262F8GP#U5M30262F8GP#D5
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
M30262F8GP#U5M30262F8GP#U3
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Flash Memory
184
Outline Performance
Table 1.19.1. Outline performance of the M16C/26 (flash memory version)
Note 1: Block A and Block B are 10,000 times E/W. All other blocks are 1000 times E/W. (Under
Note 2: Definition of E/W times:
Flash memory operation mode
Erase block
division
Write method
Erase method
Erase/Write (E/W) control method
Protect method
Number of commands
Erase/Write count (Notes 1, 2)
Data Retention
ROM code protect
Table 1.19.1 shows the outline performance of the M16C/26 (flash memory version).
development; mass production scheduled to start in the 3rd quarter of 2003.)
The E/W times are defined to be per-block erasure times. For example, assume a case whereby a
4-Kbyte Block A is programmed one word at a time and erased once all 2048 write operations
have completed. In this case, the block is considered to have been written and erased once.
If a product is 100 times E/W, each block in it can be erased up to 100 times. When 10,000 times
E/W, Block A and Block B can each be erased up to 10,000 times. All other blocks can each be
erased up to 1000 times.
Preliminary Specifications Rev. 0.9
Specifications in this manual are tentative and subject to change.
Item
User ROM area
Three user modes (standard serial I/O, CPU rewrite, parallel I/O)
In units of word.
Block erase
Depends on device code (see Table 1.2b)
E/W control by software command
Two 8Kbyte user by register lock bit (FMR02)
5 commands
10 years
Parallel I/O and standard serial I/O modes are supported.
See Figure 1.19.1
Renesas Technology Corp.
Performance
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
M16C/26 Group
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