MCP6001UT-I/OT Microchip Technology, MCP6001UT-I/OT Datasheet - Page 4

IC OPAMP SGL 1.8V R-R I/O SOT235

MCP6001UT-I/OT

Manufacturer Part Number
MCP6001UT-I/OT
Description
IC OPAMP SGL 1.8V R-R I/O SOT235
Manufacturer
Microchip Technology
Datasheets

Specifications of MCP6001UT-I/OT

Slew Rate
0.6 V/µs
Package / Case
SOT-23-5, SC-74A, SOT-25
Amplifier Type
General Purpose
Number Of Circuits
1
Output Type
Rail-to-Rail
Gain Bandwidth Product
1MHz
Current - Input Bias
1pA
Voltage - Input Offset
4500µV
Current - Supply
100µA
Current - Output / Channel
23mA
Voltage - Supply, Single/dual (±)
1.8 V ~ 6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Number Of Channels
1
Common Mode Rejection Ratio (min)
60 dB
Input Offset Voltage
4.5 mV
Input Bias Current (max)
19 pA
Operating Supply Voltage
3 V, 5 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Shutdown
No
Supply Voltage (max)
6 V
Supply Voltage (min)
1.8 V
Technology
CMOS
Voltage Gain Db
112 dB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
MCP6SX2DM-PCTLPD - BOARD DAUGHTER PICTAIL MCP6SX2
-3db Bandwidth
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MCP6001UT-I/OT
MCP6001UT-I/OTRTR
MCP6001UT-I/OTRTR
MCP6001UT-I/OTTR

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP6001UT-I/OT
Manufacturer:
TI
Quantity:
3 000
Part Number:
MCP6001UT-I/OT
Manufacturer:
MICROCH1P
Quantity:
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Part Number:
MCP6001UT-I/OT
0
MCP6001/1R/1U/2/4
AC ELECTRICAL SPECIFICATIONS
TEMPERATURE SPECIFICATIONS
DS21733J-page 4
Electrical Characteristics: Unless otherwise indicated, T
V
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Characteristics: Unless otherwise indicated, V
Temperature Ranges
Industrial Temperature Range
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC (150 mil)
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-DFN (2x3)
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
L
Note:
= V
DD
/2, V
The industrial temperature devices operate over this extended temperature range, but with reduced
performance. In any case, the internal Junction Temperature (T
specification of +150°C.
OUT
Parameters
Parameters
≈ V
DD
/2, R
L
= 10 kΩ to V
L
, and C
GBWP
Sym
θ
θ
θ
θ
θ
θ
θ
θ
θ
Sym
T
T
T
T
PM
SR
E
JA
JA
JA
JA
JA
JA
JA
JA
JA
e
i
A
A
A
A
ni
ni
ni
L
= 60 pF (refer to
A
Min
Min
-40
-40
-40
-65
= +25°C, V
DD
= +1.8V to +5.5V and V
Typ
1.0
0.6
6.1
0.6
90
28
Typ
331
256
163
206
120
100
85
68
70
DD
Figure 1-1
= +1.8 to 5.5V, V
J
Max
) must not exceed the Absolute Maximum
+125
+125
+150
Max
+85
).
nV/√Hz
fA/√Hz
µVp-p
Units
SS
MHz
V/µs
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
© 2009 Microchip Technology Inc.
°
°C
°C
°C
°C
= GND.
SS
= GND, V
G = +1 V/V
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
Note
Conditions
Conditions
CM
= V
DD
/2,

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