SE5230DR2G ON Semiconductor, SE5230DR2G Datasheet - Page 3

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SE5230DR2G

Manufacturer Part Number
SE5230DR2G
Description
IC OP AMP LOW VOLTAGE 8-SOIC
Manufacturer
ON Semiconductor
Type
General Purpose Amplifierr
Datasheet

Specifications of SE5230DR2G

Amplifier Type
General Purpose
Number Of Circuits
1
Output Type
Rail-to-Rail
Slew Rate
0.25 V/µs
Gain Bandwidth Product
600kHz
Current - Input Bias
40nA
Voltage - Input Offset
400µV
Current - Supply
1.1mA
Current - Output / Channel
32mA
Voltage - Supply, Single/dual (±)
1.8 V ~ 15 V, ±0.9 V ~ 7.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Channels
1
Voltage Gain Db
126.02 dB
Common Mode Rejection Ratio (min)
85 dB
Input Offset Voltage
3 mV
Operating Supply Voltage
3 V, 5 V, 9 V, 12 V
Supply Current
1.6 mA
Maximum Power Dissipation
500 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Maximum Dual Supply Voltage
+/- 7.5 V
Minimum Operating Temperature
- 40 C
Rail/rail I/o Type
No
Number Of Elements
1
Unity Gain Bandwidth Product
0.6MHz
Common Mode Rejection Ratio
85dB
Input Bias Current
150nA
Single Supply Voltage (typ)
3/5/9/12V
Dual Supply Voltage (typ)
±3/±5V
Power Dissipation
500mW
Voltage Gain In Db
126.02dB
Power Supply Rejection Ratio
85dB
Power Supply Requirement
Single/Dual
Shut Down Feature
No
Single Supply Voltage (min)
1.8V
Single Supply Voltage (max)
15V
Dual Supply Voltage (min)
±0.9V
Dual Supply Voltage (max)
±7.5V
Technology
Bipolar
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SE5230DR2G
Manufacturer:
ON/安森美
Quantity:
20 000
DC AND AC ELECTRICAL CHARACTERISTIC
R
NE5230, SA5230
Offset Voltage
Drift
Offset Current
Drift
Bias Current
Drift
Supply Current
Common−Mode Input Range
Common−Mode Rejection Ratio
Power Supply Rejection Ratio
Load Current
For NE5230 devices, T
L
= 10 kW, full input common−mode range, over full operating temperature range.
Characteristic
Source
Source
Source
Source
Sink
Sink
Sink
Sink
low
= 0°C and T
Symbol
CMRR
PSRR
V
V
V
I
I
OS
OS
I
I
I
I
CM
high
OS
OS
B
B
S
L
= +70°C. For SA5230 devices, T
V
V
V
S
S
S
= ±0.9 V
= ±7.5 V
= ±7.5 V
V
V
V
V
V
V
OS
OS
S
S
S
S =
Unless otherwise specified, ±0.9V ≤ Vs ≤ ±7.5 V or equivalent single supply,
= ±0.9 V; T
= ±0.9 V; T
= ±7.5 V; T
V
V
V
V
V
v 6 mV, T
≤ 6 mV, T
OS
S
S
S
S
±7.5 V; T
http://onsemi.com
T
T
T
Test Conditions
= ±0.9 V; T
= ±0.9 V; T
= ±7.5 V; T
= ±7.5 V; T
A
A
A
≤ 6 mV, T
R
R
= T
= T
= T
T
T
T
T
S
S =
A
A
A
A
= 10 kW; V
low
low
low
= 25°C
= 25°C
= 25°C
= 25°C
T
T
T
A
A
10 kW; V
A
A
A
A
A
A
A
= T
= T
= T
= T
= T
3
to T
to T
to T
= T
= T
= T
= T
T
T
T
A
A
A
A
A
A
A
A
low
low
low
low
low
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
low
low
low
low
high
high
high
= 25°C
= 25°C
= 25°C
to T
to T
to T
to T
to T
CM
CM
to T
to T
to T
to T
low
high
= ±7.5 V;
high
= ±7.5 V;
high
high
high
high
= −40°C and T
high
high
high
Bias
High
High
High
High
High
High
High
High
High
High
High
High
High
High
High
High
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Any
Any
Any
Any
Any
Any
Any
Any
Any
Any
Any
high
V
= +85°C.
Min
4.0
5.0
1.0
2.0
4.0
5.0
− 0.25
V
85
80
90
85
75
80
1100
Typ
600
320
105
110
0.4
3.0
2.0
3.0
3.0
0.5
0.3
2.0
2.0
40
20
95
95
16
32
10
15
6
7
5
6
V
+
1600
1700
Max
100
150
200
150
160
750
250
800
550
600
3.0
4.0
5.0
1.4
1.4
4.0
4.0
+ 0.25
50
30
60
60
V
+
mV/°C
nA/°C
nA/°C
Unit
mV
mA
nA
nA
mA
mA
dB
dB
V

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