SE5230DR2G ON Semiconductor, SE5230DR2G Datasheet - Page 5

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SE5230DR2G

Manufacturer Part Number
SE5230DR2G
Description
IC OP AMP LOW VOLTAGE 8-SOIC
Manufacturer
ON Semiconductor
Type
General Purpose Amplifierr
Datasheet

Specifications of SE5230DR2G

Amplifier Type
General Purpose
Number Of Circuits
1
Output Type
Rail-to-Rail
Slew Rate
0.25 V/µs
Gain Bandwidth Product
600kHz
Current - Input Bias
40nA
Voltage - Input Offset
400µV
Current - Supply
1.1mA
Current - Output / Channel
32mA
Voltage - Supply, Single/dual (±)
1.8 V ~ 15 V, ±0.9 V ~ 7.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Channels
1
Voltage Gain Db
126.02 dB
Common Mode Rejection Ratio (min)
85 dB
Input Offset Voltage
3 mV
Operating Supply Voltage
3 V, 5 V, 9 V, 12 V
Supply Current
1.6 mA
Maximum Power Dissipation
500 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Maximum Dual Supply Voltage
+/- 7.5 V
Minimum Operating Temperature
- 40 C
Rail/rail I/o Type
No
Number Of Elements
1
Unity Gain Bandwidth Product
0.6MHz
Common Mode Rejection Ratio
85dB
Input Bias Current
150nA
Single Supply Voltage (typ)
3/5/9/12V
Dual Supply Voltage (typ)
±3/±5V
Power Dissipation
500mW
Voltage Gain In Db
126.02dB
Power Supply Rejection Ratio
85dB
Power Supply Requirement
Single/Dual
Shut Down Feature
No
Single Supply Voltage (min)
1.8V
Single Supply Voltage (max)
15V
Dual Supply Voltage (min)
±0.9V
Dual Supply Voltage (max)
±7.5V
Technology
Bipolar
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SE5230DR2G
Manufacturer:
ON/安森美
Quantity:
20 000
DC AND AC ELECTRICAL CHARACTERISTIC
R
NE5230, SA5230, SE5230
Large−Signal Open−Loop Gain
Output Voltage Swing
Slew Rate
Inverting Unity Gain Bandwidth
Phase Margin
Settling Time
Input Noise
Total Harmonic Distortion
For NE5230 devices, T
For SE5230 devices, T
L
= 10 kW, full input common−mode range, over full operating temperature range.
Characteristic
low
low
= −40°C and T
= 0°C and T
Symbol
V
A
V
THD
BW
SR
q
VOL
OUT
t
INN
high
S
M
high
= +70°C. For SA5230 devices, T
= +125°C.
V
V
V
S
S
S
= ±7.5 V
= ±0.9 V
= ±7.5 V
A
A
V
V
= 1; V
= 1, V
Unless otherwise specified, ±0.9V ≤ Vs ≤ ±7.5 V or equivalent single supply,
C
C
R
L
L
http://onsemi.com
C
S
Test Conditions
= 100 pF; T
= 100 pF; T
L
IN
IN
= 0 W; f = 1.0 kHz
= 100 pF, 0.1%
V
V
= 500 mV; f = 1.0 kHz
= 500 mV; f = 1.0 kHz
T
T
T
T
T
S
S =
R
A
A
A
A
A
= ±0.9 V
L
= 25°C
= T
= T
= T
= T
T
= 10 kW; T
T
T
±7.5 V
T
T
A
A
A
A
A
5
= T
low
low
low
low
= 25°C +SW
= 25°C −SW
= 25°C +SW
= 25°C −SW
A
A
= 25°C
= 25°C
low
to T
to T
to T
to T
to T
low
high
high
high
high
A
= 25°C
= −40°C and T
high
; +SW
; −SW
; +SW
; −SW
Bias
High
High
High
High
High
High
High
High
Low
Low
Low
Low
Low
Low
Any
Any
Any
Any
Any
Any
Any
Any
Any
high
= +85°C.
−7.32
−7.30
7.30
7.25
Min
120
100
750
750
700
700
60
50
−7.35
−7.35
0.003
0.002
2000
7.35
7.30
0.25
0.09
0.25
Typ
750
800
800
0.6
2.0
5.0
70
30
60
Max
nV/√Hz
nV/√Hz
V/mV
V/ms
V/ms
MHz
MHz
Unit
mV
ms
ms
%
%
V
°

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