SPT01-335DEE STMicroelectronics, SPT01-335DEE Datasheet - Page 3

• Manufacturer Part Number: SPT01-335DEE
• Description: IC OVP FOR 24V PROX SENSOR 6-QFN
• Manufacturer: STMicroelectronics

Specifications of SPT01-335DEE

• Voltage - Working: 6 ~ 32V
• Voltage - Clamping: 46V
• Technology: Mixed Technology
• Power (watts): 100W
• Number Of Circuits: 3
• Applications: Automation Sensor
• Package / Case: 6-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPT01-335DEE
Table 3.
1. Extended from DC operating at 150 °C up to peak repetitive value during the inductive load
Table 4.
Table 5.
Symbol
Symbol
Symbol
R
Z
T
TH J_A
TH J_A
V
V
V
V
V
I
demagnetization
R
AMB
V
T
RM
I
RM
CC
BR
CL
CL
F
T
D
J
F
Operating power bus supply voltage
Pulse repetitive voltage T
D3 forward peak current T
Operating ambient temperature range
Operating junction temperature range
SMD thermal resistance junction to ambient, per diode
FR4 board, copper thickness = 35 µm , S
SMD thermal transient impedance junction to ambient, per diode
T
Diode
p
ALL
ALL
ALL
ALL
ALL
ALL
D1
D3
= 15 ms, T
Recommended operating conditions
Electrical characteristics (T
Thermal resistance
Reverse stand off
voltage
Leakage reverse
current
Reverse breakdown
voltage
Peak clamping voltage
8/20µs dynamic
resistance
V
sensitivity
Peak clamping voltage
Forward drop voltage
BR
AMB
Temperature
= 85 °C, S
Name
P
j
= 0.5 s , R
= 150 °C duty cycle = 50%
Parameter
Parameter
CU
= 0.85 mm²
I
V
V
T
I
I
T
I
T
V
I
R
R
PP
R
F
J
J
P
P
RM
RM
CC
Test conditions
CC
(1)
= 25 °C, unless otherwise specified)
= 0.2 µA
= 1 mA
= 150 °C
= 300 mA
= 0.3 A, L = 1 H,
= 8 /20 µs
= 8 /20 µs,
= 2 A,
= 30 V
= 33 V
= 33 V,
= 500
CU
= 0.85 mm²
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MIN
TYP
TYP
-25 to 175
-30 to 32
-25 to 85
-30 to 35
Value
Value
Value
300
330
0.2
2.5
Characteristics
33
36
38
46
42
10
46
20
1
1
10
°C/W
°C/W
Unit
Unit
Unit
mA
µA
µA
-4
°C
°C
V
V
V
V
V
V
V
V
V
3/14
/°C