ALD1115SAL Advanced Linear Devices Inc, ALD1115SAL Datasheet

ALD1115SAL

Manufacturer Part Number

ALD1115SAL

Description

MOSFET N/P-CH 13.2V 8SOIC

Manufacturer

Advanced Linear Devices Inc

Datasheet

1.ALD1115PAL.pdf (6 pages)

Specifications of ALD1115SAL

Package / Case

8-SOIC (0.154", 3.90mm Width)

Fet Type

N and P-Channel

Fet Feature

Standard

Drain To Source Voltage (vdss)

13.2V

Vgs(th) (max) @ Id

1V @ 1µA

Power - Max

500mW

Mounting Type

Surface Mount

Minimum Operating Temperature

0 C

Configuration

Dual

Transistor Polarity

N and P-Channel

Resistance Drain-source Rds (on)

500 Ohm @ 5 V @ N Channel

Forward Transconductance Gfs (max / Min)

0.0018 S, 0.00067 S

Drain-source Breakdown Voltage

13.2 V

Gate-source Breakdown Voltage

13.2 V

Continuous Drain Current

+ 4.8 mA, - 2 mA

Power Dissipation

500 mW

Maximum Operating Temperature

+ 70 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Current - Continuous Drain (id) @ 25° C

Rds On (max) @ Id, Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

1014-1045

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ORDERING INFORMATION

GENERAL DESCRIPTION

The ALD1115 is a monolithic complementary N-channel and P-channel

transistor pair intended for a broad range of analog applications. These

enhancement-mode transistors are manufactured with Advanced Linear

Devices' enhanced ACMOS silicon gate CMOS process. It consists of

a N-channel MOSFET and a P-channel MOSFET in one package. The

ALD1115 is a dual version of the quad complementary ALD1105.

The ALD1115 offers high input impedance and negative current

temperature coefficient. The transistor pair is designed for precision

signal switching and amplifying applications in +1V to +12V systems

where low input bias current, low input capacitance and fast switching

speed are desired. Since these are MOSFET devices, they feature very

large (almost infinite) current gain in a low frequency, or near DC,

operating environment. When connected in parallel with sources, drains

and gates connected together, a CMOS analog switch can be constructed.

In addition, the ALD1115 is intended as a building block for CMOS

inverters, differential amplifier input stages, transmission gates, and

multiplexer applications.

The ALD1115 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the field effect

transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which

is specified at 30pA at room temperature. V+ is connected to the

substrate, which is the most positive voltage potential of the ALD1115,

usually SP(5). Similarly, V- is connected to the most negative voltage

potential of the ALD1115, usually SN (1).

FEATURES

• Thermal tracking between N-channel and P-channel

• Low threshold voltage of 0.7V for both N-channel

• Low input capacitance

• High input impedance -- 10

• Low input and output leakage currents

• Negative current (I

• Enhancement mode (normally off)

• DC current gain 10

• Single N-channel MOSFET and single P-channel

* Contact factory for industrial temperature range.

and P-channel MOSFETs

MOSFET in one package

-55 C to +125 C

8-Pin

CERDIP

Package

ALD1115 DA

INEAR

DVANCED

EVICES,

0 C to +70 C

8-Pin

MSOP

Package

ALD1115 MAL

Operating Temperature Range*

COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET

) temperature coefficient

NC.

("L"suffix for lead free version)

typical

0 C to +70 C

8-Pin

Plastic Dip

Package

ALD1115 PA

ALD1115PAL

0 C to +70 C

8-Pin

SOIC

Package

ALD1115 SA

ALD1115 SAL

PIN CONFIGURATION

APPLICATIONS

• Precision current mirrors

• Complementary push-pull linear drives

• Discrete analog switches

• Analog signal choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog current inverter

• Precision matched current sources

• CMOS inverter stage

• Diode clamps

• Source followers

BLOCK DIAGRAM

N DRAIN 1 (3)

P DRAIN 1 (7)

DA, MA, PA, SA PACKAGE

N GATE 1 (2)

P GATE 1 (6)

N SOURCE 1 (1)

V - (4)

P SOURCE 1 (5)

V + (8)

ALD1115

Related parts for ALD1115SAL

ALD1115SAL Summary of contents

Page 1

A DVANCED L INEAR D I EVICES, NC. COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET GENERAL DESCRIPTION The ALD1115 is a monolithic complementary N-channel and P-channel transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with ...

Page 2

ABSOLUTE MAXIMUM RATINGS Drain-source voltage Gate-source voltage Power dissipation Operating temperature range Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS unless otherwise specified Channel Parameter Symbol Min ...

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ALD1115SAL Advanced Linear Devices Inc, ALD1115SAL Datasheet

ALD1115SAL

Specifications of ALD1115SAL

Related parts for ALD1115SAL

ALD1115SAL Summary of contents

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