ALD1115SAL Advanced Linear Devices Inc, ALD1115SAL Datasheet - Page 2

• Manufacturer Part Number: ALD1115SAL
• Description: MOSFET N/P-CH 13.2V 8SOIC
• Manufacturer: Advanced Linear Devices Inc

Specifications of ALD1115SAL

• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Fet Type: N and P-Channel
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 13.2V
• Vgs(th) (max) @ Id: 1V @ 1µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: 0 C
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 500 Ohm @ 5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 0.0018 S, 0.00067 S
• Drain-source Breakdown Voltage: 13.2 V
• Gate-source Breakdown Voltage: 13.2 V
• Continuous Drain Current: + 4.8 mA, - 2 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1045

ALD1115
Gate Threshold V
Voltage
Gate Threshold
Temperature
Drift
On Drain
Current
Trans-.
conductance
Output
Conductance
Drain Source
ON Resistance
Drain Source
Breakdown
Voltage
Off Drain
Current
Gate Leakage
Current
Input
Capacitance
OPERATING ELECTRICAL CHARACTERISTICS
T
Parameter
A
= 25 C unless otherwise specified
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
Gate-source voltage, V
Power dissipation
Operating temperature range
Storage temperature range
Lead temperature, 10 seconds
R
I
Symbol Min
TC
I
G
G
BV
DS(OFF)
I
C
DS (ON)
GSS
DS(ON)
T
ISS
fs
OS
VT
DSS
0.4
12
3
1
N - Channel
GS
DS
-1.2
Typ
200
350
0.7
4.8
1.8
0.1
10
1
PA, SA package
DA package
Max
500
400
1.0
30
4
1
3
mV/ C
mmho
Unit
V
mA
V
pA
nA
pA
nA
pF
mho
Advanced Linear Devices
I
V
V
V
V
I
V
T
V
T
DS
DS
A
A
GS
DS
DS
DS
DS
DS
= 125 C
= 125 C
Conditions
= 1 A V
= 1 A V
= 5V I
= 5V I
= 0.1V V
=12V I
= 0V V
= V
Test
DS
DS
DS
= 5V
GS
GS
GS
GS
= 10mA
GS
= 10mA
= 0V
= V
=0V
=12V
= 5V
DS
0.25
-0.4
-1.3
Min
-12
P - Channel
1200
0.67
-0.7
-1.3
Typ
40
10
-2
1
1
1800
Max
-1.0
400
30
4
1
3
mV/ C
Unit
V
mA
mmho
V
pA
nA
pA
nA
pF
mho
I
V
V
V
V
I
V
T
V
T
DS
DS
A
A
GS
DS
DS
DS
DS
DS
-55 C to +125 C
-65 C to +150 C
Conditions
= 125 C
= 125 C
= -1 A V
= -1 A V
= -5V I
= -5V I
= -0.1V V
= -12V V
= 0V V
= V
0 C to +70 C
Test
DS
500 mW
= -5V
+260 C
DS
DS
GS
GS
GS
13.2V
13.2V
GS
= -10mA
GS
= -10mA
=0V
=-12V
= V
= 0V
= -5V
DS
2