ALD1115SAL Advanced Linear Devices Inc, ALD1115SAL Datasheet - Page 6

• Manufacturer Part Number: ALD1115SAL
• Description: MOSFET N/P-CH 13.2V 8SOIC
• Manufacturer: Advanced Linear Devices Inc

Specifications of ALD1115SAL

• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Fet Type: N and P-Channel
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 13.2V
• Vgs(th) (max) @ Id: 1V @ 1µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: 0 C
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 500 Ohm @ 5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 0.0018 S, 0.00067 S
• Drain-source Breakdown Voltage: 13.2 V
• Gate-source Breakdown Voltage: 13.2 V
• Continuous Drain Current: + 4.8 mA, - 2 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1045

ALD1115
DIODE-CONNECTED CONFIGURATION
I
SOURCE
R
Q
Q
V
Q
1
, Q
2
4
+
V
2
OUT =
, Q
3
, Q
4
V
: N - Channel MOSFET
+ -
(1/2 ALD1105
V
DS
I
SET
ALD1116)
V + = +5V
CASCODE CURRENT SOURCES
TYPICAL APPLICATIONS
R
SET
V
Q
Q
Advanced Linear Devices
+
3
1
R
V
OUT =
V
DS
I
Q1, Q2, Q3, Q4: P - Channel MOSFET
SET
I
SOURCE
Q
Q
3
1
IN
= I
R
R A
SET
SET
SOURCE FOLLOWER
=
V + = +5V
V + - 2Vt
R
SET
V +
~
=
R
R B
3
SET
Q
Q
I
SOURCE
2
4
OUT
6